AUIRF1324S Todos los transistores

 

AUIRF1324S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF1324S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 24 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 340 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 3440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00165 Ohm

Encapsulados: D2PAK

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AUIRF1324S datasheet

 ..1. Size:461K  infineon
 auirf1324s auirf1324l.pdf pdf_icon

AUIRF1324S

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175 C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

 0.1. Size:472K  international rectifier
 auirf1324strl.pdf pdf_icon

AUIRF1324S

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3m 175 C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

 0.2. Size:655K  infineon
 auirf1324s-7p.pdf pdf_icon

AUIRF1324S

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175 C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

 5.1. Size:240K  international rectifier
 auirf1324wl.pdf pdf_icon

AUIRF1324S

PD - 97676A AUTOMOTIVE GRADE AUIRF1324WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 24V l Ultra Low On-Resistance RDS(on) typ. 1.16m l 50% Lower Lead Resistance max. 1.30m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 382A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free,

MOSTRAR MÁS

Otros transistores... AUIRF1010EZL , AUIRF1010EZS , AUIRF1010Z , AUIRF1010ZL , AUIRF1010ZS , AUIRF1018E , AUIRF1018ES , AUIRF1324 , IRFZ44 , AUIRF1324S-7P , AUIRF1324WL , AUIRF1404 , AUIRF1404L , AUIRF1404S , AUIRF1404Z , AUIRF1404ZL , AUIRF1404ZS .

 

 

 


 
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