AUIRF1324WL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRF1324WL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 382 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 120 nC
   trⓘ - Tiempo de subida: 200 nS
   Cossⓘ - Capacitancia de salida: 3390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
   Paquete / Cubierta: TO262

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AUIRF1324WL Datasheet (PDF)

..1. Size:240K infineon
auirf1324wl.pdf

PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,

5.1. Size:472K international rectifier
auirf1324strl.pdf

PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua

5.2. Size:461K infineon
auirf1324s auirf1324l.pdf

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

5.3. Size:655K infineon
auirf1324s-7p.pdf

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

5.4. Size:432K infineon
auirf1324.pdf

PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe

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