AUIRF1404 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF1404

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 202 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 1659 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220AB

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AUIRF1404 datasheet

 ..1. Size:212K  international rectifier
 auirf1404.pdf pdf_icon

AUIRF1404

PD-97684 AUTOMOTIVE GRADE AUIRF1404 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l Dynamic dv/dt Rating RDS(on) typ. 3.5m l 175 C Operating Temperature max 4.0m l Fast Switching G ID (Silicon Limited) 202A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 160A up to Tjmax l Lead-Free

 0.1. Size:362K  international rectifier
 auirf1404zstrl.pdf pdf_icon

AUIRF1404

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET Power MOSFET Low On-Resistance D V(BR)DSS 40V 175 C Operating Temperature Fast Switching RDS(on) max. 3.7m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

 0.2. Size:303K  infineon
 auirf1404s auirf1404l.pdf pdf_icon

AUIRF1404

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175 C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

 0.3. Size:383K  infineon
 auirf1404z auirf1404zs auirf1404zl.pdf pdf_icon

AUIRF1404

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

MOSTRAR MÁS

Otros transistores... AUIRF1010ZL, AUIRF1010ZS, AUIRF1018E, AUIRF1018ES, AUIRF1324, AUIRF1324S, AUIRF1324S-7P, AUIRF1324WL, IRLZ44N, AUIRF1404L, AUIRF1404S, AUIRF1404Z, AUIRF1404ZL, AUIRF1404ZS, AUIRF1405, AUIRF1405ZL, AUIRF1405ZS