AUIRF2804L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF2804L  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 270 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: TO262

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AUIRF2804L datasheet

 ..1. Size:750K  infineon
 auirf2804 auirf2804s auirf2804l.pdf pdf_icon

AUIRF2804L

AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut

 5.1. Size:214K  international rectifier
 auirf2804wl.pdf pdf_icon

AUIRF2804L

PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

 5.2. Size:281K  international rectifier
 auirf2804strr.pdf pdf_icon

AUIRF2804L

AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.5m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID

 5.3. Size:355K  infineon
 auirf2804s-7p.pdf pdf_icon

AUIRF2804L

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

MOSTRAR MÁS

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