AUIRF2805 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF2805
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 1190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de AUIRF2805 MOSFET
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AUIRF2805 datasheet
auirf2805.pdf
PD - 97690A AUTOMOTIVE GRADE AUIRF2805 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l 175 C Operating Temperature D V(BR)DSS 55V l Fast Switching RDS(on) typ. 3.9m l Fully Avalanche Rated max 4.7m l Repetitive Avalanche Allowed G up to Tjmax ID (Silicon Limited) 175A l Lead-Free, RoHS Compliant S ID (Package Limited) 75A l Autom
auirf2805l auirf2805s.pdf
PD - 96383A AUTOMOTIVE GRADE AUIRF2805S AUIRF2805L HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 4.7m 175 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Sp
auirf2804wl.pdf
PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description
auirf2804strr.pdf
AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.5m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID
Otros transistores... AUIRF1404ZS, AUIRF1405, AUIRF1405ZL, AUIRF1405ZS, AUIRF2804, AUIRF2804L, AUIRF2804S, AUIRF2804S-7P, 7N65, AUIRF2805L, AUIRF2805S, AUIRF2807, AUIRF2903Z, AUIRF2903ZL, AUIRF2903ZS, AUIRF2907Z, AUIRF2907ZS-7P
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