AUIRF2903ZL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF2903ZL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 231 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 235 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 1980 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: TO262
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AUIRF2903ZL Datasheet (PDF)
auirf2903zs auirf2903zl.pdf
AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie
auirf2903z.pdf
AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu
auirf2907zs-7p.pdf
PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot
auirf2907z.pdf
PD - 97545AUTOMOTIVE GRADEAUIRF2907ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.4.5m Fast SwitchingG Repetitive Avalanche Allowed up to ID (Silicon Limited)170ATjmaxSID (Package Limited)75A Lead-Free, RoHS Compliant Automotive Qualified *
auirf2907zs7ptl.pdf
PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SNN0630Q | TPA65R520D
History: SNN0630Q | TPA65R520D
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918