AUIRF3004WL Todos los transistores

 

AUIRF3004WL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRF3004WL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 386 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 140 nC
   trⓘ - Tiempo de subida: 220 nS
   Cossⓘ - Capacitancia de salida: 1930 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
   Paquete / Cubierta: TO262WIDELEAD

 Búsqueda de reemplazo de MOSFET AUIRF3004WL

 

AUIRF3004WL Datasheet (PDF)

 ..1. Size:230K  infineon
auirf3004wl.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97677AUTOMOTIVE GRADEAUIRF3004WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS40Vl Ultra Low On-ResistanceRDS(on) typ.1.27ml 50% Lower Lead Resistancemax. 1.40ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)386A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free, RoHS

 6.1. Size:615K  international rectifier
auirf3007.pdf

AUIRF3004WL
AUIRF3004WL

PD - 96417AUTOMOTIVE GRADEAUIRF3007HEXFET Power MOSFETFeaturesDl Advanced Planar Technology V(BR)DSS75Vl Low On-ResistanceRDS(on) typ.10.5ml 175C Operating Temperaturemax 12.6ml Fast SwitchingGID (Silicon Limited)l Fully Avalanche Rated 80Al Repetitive Avalanche Allowed SID (Package Limited)75Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive

 8.1. Size:236K  international rectifier
auirf3415.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptio

 8.2. Size:330K  international rectifier
auirf3205zstrl.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Li

 8.3. Size:314K  international rectifier
auirf3315s.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionS

 8.4. Size:223K  international rectifier
auirf3504.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97696AAUTOMOTIVE GRADEAUIRF3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Rated G max 9.2ml Repetitive Avalanche AllowedSID87Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically des

 8.5. Size:221K  international rectifier
auirf3808.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97697AAUTOMOTIVE GRADEAUIRF3808HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.5.9ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 7.0ml Fast SwitchingSID140Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*D

 8.6. Size:330K  international rectifier
auirf3710zstrl.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

 8.7. Size:220K  international rectifier
auirf3808s.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 8.8. Size:382K  international rectifier
auirf3805strl.pdf

AUIRF3004WL
AUIRF3004WL

PD - 96319AUTOMOTIVE GRADEAUIRF3805AUIRF3805SAUIRF3805LFeatures HEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSS55VDl Ultra Low On-ResistanceRDS(on) typ.2.6ml 175C Operating Temperaturel Fast Switching max. 3.3mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)210A l Lead-Free, RoHS CompliantSl Automotive Qualified * ID

 8.9. Size:743K  infineon
auirf3805s-7p auirf3805l-7p.pdf

AUIRF3004WL
AUIRF3004WL

AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed

 8.10. Size:353K  infineon
auirf3710z auirf3710zs.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

 8.11. Size:1364K  infineon
auirf3305.pdf

AUIRF3004WL
AUIRF3004WL

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

 8.12. Size:707K  infineon
auirf3205z auirf3205zs.pdf

AUIRF3004WL
AUIRF3004WL

AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *

 8.13. Size:205K  infineon
auirf3205.pdf

AUIRF3004WL
AUIRF3004WL

PD - 97741AUTOMOTIVE GRADEAUIRF3205FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceV(BR)DSS55Vl Dynamic dV/dT RatingRDS(on) max.8.0ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)110Al Fully Avalanche RatedSID (Package Limited)75Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Complian

 8.14. Size:754K  infineon
auirf3805 auirf3805s auirf3805l.pdf

AUIRF3004WL
AUIRF3004WL

AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv

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