AUIRF3007 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF3007

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0126 Ohm

Encapsulados: TO220AB

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AUIRF3007 datasheet

 ..1. Size:615K  international rectifier
 auirf3007.pdf pdf_icon

AUIRF3007

PD - 96417 AUTOMOTIVE GRADE AUIRF3007 HEXFET Power MOSFET Features D l Advanced Planar Technology V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 10.5m l 175 C Operating Temperature max 12.6m l Fast Switching G ID (Silicon Limited) l Fully Avalanche Rated 80A l Repetitive Avalanche Allowed S ID (Package Limited) 75A up to Tjmax l Lead-Free, RoHS Compliant l Automotive

 6.1. Size:230K  international rectifier
 auirf3004wl.pdf pdf_icon

AUIRF3007

PD - 97677 AUTOMOTIVE GRADE AUIRF3004WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 40V l Ultra Low On-Resistance RDS(on) typ. 1.27m l 50% Lower Lead Resistance max. 1.40m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 386A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS

 8.1. Size:236K  international rectifier
 auirf3415.pdf pdf_icon

AUIRF3007

PD - 97625 AUTOMOTIVE GRADE AUIRF3415 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 0.042 l Fast Switching G l Fully Avalanche Rated ID 43A S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S Descriptio

 8.2. Size:330K  international rectifier
 auirf3205zstrl.pdf pdf_icon

AUIRF3007

PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching RDS(on) max. 6.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Li

MOSTRAR MÁS

Otros transistores... AUIRF2805S, AUIRF2807, AUIRF2903Z, AUIRF2903ZL, AUIRF2903ZS, AUIRF2907Z, AUIRF2907ZS-7P, AUIRF3004WL, IRLB4132, AUIRF3205, AUIRF3205Z, AUIRF3205ZS, AUIRF3305, AUIRF3415, AUIRF3504, AUIRF3710Z, AUIRF3710ZS