AUIRF3710ZS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF3710ZS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 160 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 59 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 77 nS
Cossⓘ - Capacitancia de salida: 290 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de AUIRF3710ZS MOSFET
- Selecciónⓘ de transistores por parámetros
AUIRF3710ZS datasheet
..1. Size:353K international rectifier
auirf3710z auirf3710zs.pdf 
PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE
0.1. Size:330K international rectifier
auirf3710zstrl.pdf
PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE
8.1. Size:236K international rectifier
auirf3415.pdf
PD - 97625 AUTOMOTIVE GRADE AUIRF3415 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 0.042 l Fast Switching G l Fully Avalanche Rated ID 43A S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S Descriptio
8.2. Size:330K international rectifier
auirf3205zstrl.pdf
PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching RDS(on) max. 6.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Li
8.3. Size:314K international rectifier
auirf3315s.pdf
PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S
8.4. Size:223K international rectifier
auirf3504.pdf
PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated G max 9.2m l Repetitive Avalanche Allowed S ID 87A up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description Specifically des
8.5. Size:221K international rectifier
auirf3808.pdf
PD - 97697A AUTOMOTIVE GRADE AUIRF3808 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 5.9m l Dynamic dv/dt Rating G l 175 C Operating Temperature max 7.0m l Fast Switching S ID 140A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D
8.6. Size:230K international rectifier
auirf3004wl.pdf
PD - 97677 AUTOMOTIVE GRADE AUIRF3004WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 40V l Ultra Low On-Resistance RDS(on) typ. 1.27m l 50% Lower Lead Resistance max. 1.40m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 386A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS
8.7. Size:220K international rectifier
auirf3808s.pdf
PD - 97698A AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance VDSS 75V Dynamic dV/dT Rating RDS(on) typ. 5.9m 175 C Operating Temperature G max. 7.0m Fast Switching S Fully Avalanche Rated ID 106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
8.8. Size:615K international rectifier
auirf3007.pdf
PD - 96417 AUTOMOTIVE GRADE AUIRF3007 HEXFET Power MOSFET Features D l Advanced Planar Technology V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 10.5m l 175 C Operating Temperature max 12.6m l Fast Switching G ID (Silicon Limited) l Fully Avalanche Rated 80A l Repetitive Avalanche Allowed S ID (Package Limited) 75A up to Tjmax l Lead-Free, RoHS Compliant l Automotive
8.9. Size:205K international rectifier
auirf3205.pdf
PD - 97741 AUTOMOTIVE GRADE AUIRF3205 Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance V(BR)DSS 55V l Dynamic dV/dT Rating RDS(on) max. 8.0m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 110A l Fully Avalanche Rated S ID (Package Limited) 75A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Complian
8.10. Size:382K international rectifier
auirf3805strl.pdf
PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET Power MOSFET l Advanced Process Technology V(BR)DSS 55V D l Ultra Low On-Resistance RDS(on) typ. 2.6m l 175 C Operating Temperature l Fast Switching max. 3.3m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 210A l Lead-Free, RoHS Compliant S l Automotive Qualified * ID
8.11. Size:743K infineon
auirf3805s-7p auirf3805l-7p.pdf
AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175 C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed
8.12. Size:1364K infineon
auirf3305.pdf
AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de
8.13. Size:707K infineon
auirf3205z auirf3205zs.pdf
AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175 C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *
8.14. Size:754K infineon
auirf3805 auirf3805s auirf3805l.pdf
AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv
Otros transistores... AUIRF3007
, AUIRF3205
, AUIRF3205Z
, AUIRF3205ZS
, AUIRF3305
, AUIRF3415
, AUIRF3504
, AUIRF3710Z
, 13N50
, AUIRF3805
, AUIRF3805L
, AUIRF3805L-7P
, AUIRF3805S
, AUIRF3805S-7P
, AUIRF3808
, AUIRF3808S
, AUIRF4104
.
