AUIRF6215 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF6215

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO220AB

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AUIRF6215 datasheet

 ..1. Size:270K  international rectifier
 auirf6215.pdf pdf_icon

AUIRF6215

PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D

 0.1. Size:820K  international rectifier
 auirf6215s.pdf pdf_icon

AUIRF6215

AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec

 0.2. Size:2157K  infineon
 auirf6215s.pdf pdf_icon

AUIRF6215

AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo

 6.1. Size:229K  international rectifier
 auirf6218l auirf6218s.pdf pdf_icon

AUIRF6215

AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175 C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D

MOSTRAR MÁS

Otros transistores... AUIRF4104, AUIRF4104S, AUIRF4905, AUIRF4905L, AUIRF4905S, AUIRF5210S, AUIRF540Z, AUIRF540ZS, 4N60, AUIRF7207Q, AUIRF7416Q, AUIRF7478Q, AUIRF7640S2, AUIRF7647S2TR, AUIRF7648M2TR, AUIRF7665S2, AUIRF7669L2TR