AUIRF7416Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF7416Q

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 890 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SO8

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AUIRF7416Q datasheet

 ..1. Size:244K  international rectifier
 auirf7416q.pdf pdf_icon

AUIRF7416Q

AUTOMOTIVE GRADE AUIRF7416Q HEXFET Power MOSFET Features l Advanced Process Technology A 1 8 S D V(BR)DSS -30V l Low On-Resistance 2 7 S D l Logic Level Gate Drive 3 6 S D RDS(on) max. 0.02 l P-Channel MOSFET 4 5 G D l Dynamic dV/dT Rating ID -10A Top View l 150 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Autom

 7.1. Size:224K  international rectifier
 auirf7484q.pdf pdf_icon

AUIRF7416Q

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150 C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

 7.2. Size:211K  international rectifier
 auirf7478q.pdf pdf_icon

AUIRF7416Q

AUTOMOTIVE GRADE AUIRF7478Q Features HEXFET Power MOSFET Advanced Planar Technology A A V(BR)DSS 1 8 60V Low On-Resistance S D Logic Level Gate Drive 2 7 S D RDS(on) typ. 20m Dynamic dV/dT Rating 3 6 S D 150 C Operating Temperature max. 26m Fast Switching 4 5 G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,

 7.3. Size:416K  infineon
 auirf7484q.pdf pdf_icon

AUIRF7416Q

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology A VDSS A 1 8 Low On-Resistance 40V S D 2 7 S D 150 C Operating Temperature RDS(on) max. 3 6 S D Fast Switching 10m 4 5 G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto

MOSTRAR MÁS

Otros transistores... AUIRF4905, AUIRF4905L, AUIRF4905S, AUIRF5210S, AUIRF540Z, AUIRF540ZS, AUIRF6215, AUIRF7207Q, IRF1407, AUIRF7478Q, AUIRF7640S2, AUIRF7647S2TR, AUIRF7648M2TR, AUIRF7665S2, AUIRF7669L2TR, AUIRF7675M2, AUIRF7736M2TR