AUIRFB3207Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFB3207Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 170 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de AUIRFB3207Z MOSFET

- Selecciónⓘ de transistores por parámetros

 

AUIRFB3207Z datasheet

 4.1. Size:282K  international rectifier
 auirfb3207.pdf pdf_icon

AUIRFB3207Z

PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified *

 8.1. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB3207Z

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 8.2. Size:278K  international rectifier
 auirfb4410.pdf pdf_icon

AUIRFB3207Z

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

 8.3. Size:211K  international rectifier
 auirfba1405.pdf pdf_icon

AUIRFB3207Z

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

MOSTRAR MÁS

Otros transistores... AUIRF7805Q, AUIRF9540N, AUIRF9Z34N, AUIRFB3004, AUIRFB3006, AUIRFB3077, AUIRFB3206, AUIRFB3207, IRF1405, AUIRFB3306, AUIRFB3307Z, AUIRFB3607, AUIRFB3806, AUIRFB4110, AUIRFB4115, AUIRFB4127, AUIRFB4227