AUIRFB4115 Todos los transistores

 

AUIRFB4115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFB4115

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 380 W

Tensión drenaje-fuente (Vds): 150 V

Corriente continua de drenaje (Id): 104 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 77 nC

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO220AB

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AUIRFB4115 Datasheet (PDF)

4.1. auirfb8405.pdf Size:222K _update-mosfet

AUIRFB4115
AUIRFB4115

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET® Power MOSFET  Advanced Process Technology D  New Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ.2.1mΩ  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max. 2.5mΩ  Lead-Free, RoHS Compliant G  ID (Silicon Limited) 185A  Automotive Qualified * ID (Package Limited) 120A S

4.2. auirfb8407 auirfs8407 auirfsl8407.pdf Size:340K _international_rectifier

AUIRFB4115
AUIRFB4115

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.4m l Fast Switching Ω l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m Ω l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

 4.3. auirfba1405.pdf Size:211K _international_rectifier

AUIRFB4115
AUIRFB4115

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET® Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175°C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

4.4. auirfb8409 auirfs8409 auirfsl8409.pdf Size:398K _international_rectifier

AUIRFB4115
AUIRFB4115

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) (SMD) typ. 0.97mΩ l Fast Switching max. 1.2mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

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