AUIRFB4410Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFB4410Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 97 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO220AB

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AUIRFB4410Z datasheet

 4.1. Size:278K  international rectifier
 auirfb4410.pdf pdf_icon

AUIRFB4410Z

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

 7.1. Size:717K  infineon
 auirfb4610 auirfs4610.pdf pdf_icon

AUIRFB4410Z

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 8.1. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB4410Z

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 8.2. Size:211K  international rectifier
 auirfba1405.pdf pdf_icon

AUIRFB4410Z

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

MOSTRAR MÁS

Otros transistores... AUIRFB4110, AUIRFB4115, AUIRFB4127, AUIRFB4227, AUIRFB4310Z, AUIRFB4321, AUIRFB4332, AUIRFB4410, AOD4184A, AUIRFB4610, AUIRFB4615, AUIRFB4620, AUIRFBA1405P, AUIRFI3205, AUIRFIZ34N, AUIRFIZ44N, AUIRFL014N