AUIRFBA1405P Todos los transistores

 

AUIRFBA1405P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFBA1405P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 174 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 1210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO273AA SUPER220
 

 Búsqueda de reemplazo de AUIRFBA1405P MOSFET

   - Selección ⓘ de transistores por parámetros

 

Principales características: AUIRFBA1405P

 3.1. Size:211K  international rectifier
auirfba1405.pdf pdf_icon

AUIRFBA1405P

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

 8.1. Size:398K  international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFBA1405P

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 8.2. Size:278K  international rectifier
auirfb4410.pdf pdf_icon

AUIRFBA1405P

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

 8.3. Size:282K  international rectifier
auirfb3207.pdf pdf_icon

AUIRFBA1405P

PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified *

Otros transistores... AUIRFB4310Z , AUIRFB4321 , AUIRFB4332 , AUIRFB4410 , AUIRFB4410Z , AUIRFB4610 , AUIRFB4615 , AUIRFB4620 , AO4468 , AUIRFI3205 , AUIRFIZ34N , AUIRFIZ44N , AUIRFL014N , AUIRFL024N , AUIRFP064N , AUIRFP1405 , AUIRFP2907 .

History: AUIRF8739L2

 

 
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