AUIRFL014N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFL014N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.1 nS

Cossⓘ - Capacitancia de salida: 72 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: SOT223

 Búsqueda de reemplazo de AUIRFL014N MOSFET

- Selecciónⓘ de transistores por parámetros

 

AUIRFL014N datasheet

 ..1. Size:215K  international rectifier
auirfl014n.pdf pdf_icon

AUIRFL014N

AUTOMOTIVE GRADE AUIRFL014N HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 150 C Operating Temperature RDS(on) max. 0.16 G Fast Switching Fully Avalanche Rated S Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed f

 7.1. Size:208K  international rectifier
auirfl024n.pdf pdf_icon

AUIRFL014N

AUTOMOTIVE GRADE AUIRFL024N HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 75m Dynamic dV/dT Rating G 150 C Operating Temperature ID S 2.8A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified* S D Descri

 9.1. Size:403K  1
auirf7341q.pdf pdf_icon

AUIRFL014N

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co

 9.2. Size:365K  1
auirf7319q.pdf pdf_icon

AUIRFL014N

AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 VDSS 30V -30V Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.042 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.029 0.058 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 6.5A -4.9A Fully Avalanch

Otros transistores... AUIRFB4410Z, AUIRFB4610, AUIRFB4615, AUIRFB4620, AUIRFBA1405P, AUIRFI3205, AUIRFIZ34N, AUIRFIZ44N, IRF740, AUIRFL024N, AUIRFP064N, AUIRFP1405, AUIRFP2907, AUIRFP2907Z, AUIRFP3077, AUIRFP3206, AUIRFP3306