AUIRFP3206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFP3206
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 280 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 200 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 120 nC
Tiempo de subida (tr): 82 nS
Conductancia de drenaje-sustrato (Cd): 720 pF
Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
Paquete / Cubierta: TO247AC
Búsqueda de reemplazo de MOSFET AUIRFP3206
AUIRFP3206 Datasheet (PDF)
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AUTOMOTIVE GRADEAUIRFP4568AUIRFP4568-EFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS 150Vl 175C Operating TemperatureRDS(on) typ.4.8ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax G max. 5.9ml Lead-Free, RoHS CompliantSID 171Al Automotive Qualified *DDescriptionDSpecif
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PD - 97724AUTOMOTIVE GRADEAUIRFP1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT RatingRDS(on) typ.4.2ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)160Al Repetitive Avalanche AllowedSID (Package Limited)95Aup to Tjmaxl Lead-Free, R
auirfp064n.pdf
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PD - 96375AUTOMOTIVE GRADEAUIRFP064NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.008 Fast SwitchingG Fully Avalanche RatedID110A Repetitive Avalanche Allowed up to TjmaxS Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifical
auirfp2907z.pdf
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PD - 97550AUIRFP2907ZAUTOMOTIVE GRADEHEXFET Power MOSFETDFeaturesV(BR)DSS75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) max.4.5mG 175C Operating Temperature Fast SwitchingID170AS Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for
auirfp4409.pdf
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AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
auirfp2907.pdf
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PD -97692AAUTOMOTIVE GRADEAUIRFP2907HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.3.6ml Dynamic dV/dT Ratingl 175C Operating Temperaturemax 4.5mGl Fast SwitchingID (Silicon Limited)209Al Fully Avalanche RatedSID (Package Limited)90Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, R
auirfp2602.pdf
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PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A Description
auirfp4310z.pdf
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AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom
auirfp4004.pdf
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PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS
auirfp4568.pdf
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AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S
auirfp4409.pdf
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AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
auirfp4110.pdf
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AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Liste
Recientemente añadidas las descripciónes de los transistores:
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