AUIRFP4468 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFP4468

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 290 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 230 nS

Cossⓘ - Capacitancia de salida: 1360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: TO247AC

 Búsqueda de reemplazo de AUIRFP4468 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AUIRFP4468 datasheet

 6.1. Size:373K  international rectifier
auirfp4409.pdf pdf_icon

AUIRFP4468

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 6.2. Size:476K  infineon
auirfp4409.pdf pdf_icon

AUIRFP4468

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 7.1. Size:275K  international rectifier
auirfp4004.pdf pdf_icon

AUIRFP4468

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S

 7.2. Size:381K  international rectifier
auirfp4568-e.pdf pdf_icon

AUIRFP4468

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175 C Operating Temperature RDS(on) typ.4.8m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9m l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

Otros transistores... AUIRFP3206, AUIRFP3306, AUIRFP4004, AUIRFP4110, AUIRFP4227, AUIRFP4310Z, AUIRFP4368, AUIRFP4410Z, IRFB4227, AUIRFP4568, AUIRFP4668, AUIRFP4768, AUIRFR024N, AUIRFR1010Z, AUIRFR1018E, AUIRFR120Z, AUIRFR2307Z