AUIRFR1010Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR1010Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 91 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: DPAK

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AUIRFR1010Z datasheet

 ..1. Size:242K  international rectifier
 auirfr1010z.pdf pdf_icon

AUIRFR1010Z

PD - 97683 AUTOMOTIVE GRADE AUIRFR1010Z HEXFET Power MOSFET Features D VDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ. 5.8m 175 C Operating Temperature max. 7.5m G Fast Switching ID (Silicon Limited) 91A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) S 42A Lead-Free, RoHS Compliant Automotive Qualifie

 5.1. Size:619K  infineon
 auirfr1018e.pdf pdf_icon

AUIRFR1010Z

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175 C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu

 7.1. Size:309K  international rectifier
 auirfu120z auirfr120z.pdf pdf_icon

AUIRFR1010Z

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

 7.2. Size:309K  international rectifier
 auirfr120ztrl.pdf pdf_icon

AUIRFR1010Z

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

MOSTRAR MÁS

Otros transistores... AUIRFP4310Z, AUIRFP4368, AUIRFP4410Z, AUIRFP4468, AUIRFP4568, AUIRFP4668, AUIRFP4768, AUIRFR024N, 2N7000, AUIRFR1018E, AUIRFR120Z, AUIRFR2307Z, AUIRFR2405, AUIRFR2407, AUIRFR2607Z, AUIRFR2905Z, AUIRFR3504