AUIRFR120Z Todos los transistores

 

AUIRFR120Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFR120Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: DPAK
 

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AUIRFR120Z Datasheet (PDF)

 ..1. Size:309K  international rectifier
 auirfu120z auirfr120z.pdf pdf_icon

AUIRFR120Z

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

 0.1. Size:309K  international rectifier
 auirfr120ztrl.pdf pdf_icon

AUIRFR120Z

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

 7.1. Size:242K  international rectifier
 auirfr1010z.pdf pdf_icon

AUIRFR120Z

PD - 97683AUTOMOTIVE GRADEAUIRFR1010ZHEXFET Power MOSFETFeaturesDVDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ.5.8m 175C Operating Temperature max. 7.5mG Fast SwitchingID (Silicon Limited) 91A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)S 42A Lead-Free, RoHS Compliant Automotive Qualifie

 7.2. Size:619K  infineon
 auirfr1018e.pdf pdf_icon

AUIRFR120Z

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu

MOSTRAR MÁS

Otros transistores... AUIRFP4410Z , AUIRFP4468 , AUIRFP4568 , AUIRFP4668 , AUIRFP4768 , AUIRFR024N , AUIRFR1010Z , AUIRFR1018E , 2SK3878 , AUIRFR2307Z , AUIRFR2405 , AUIRFR2407 , AUIRFR2607Z , AUIRFR2905Z , AUIRFR3504 , AUIRFR3504Z , AUIRFR3607 .

History: HSP4048 | FQB8N25TM | EFC2J004NUZ | VB162KX | IRFU9120NPBF | HGK220N25S | APT50M50JLL

 

 
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