AUIRFR2307Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR2307Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 53 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: DPAK

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AUIRFR2307Z datasheet

 ..1. Size:678K  infineon
 auirfr2307z.pdf pdf_icon

AUIRFR2307Z

AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri

 0.1. Size:298K  international rectifier
 auirfr2307ztr.pdf pdf_icon

AUIRFR2307Z

PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Qualified * Desc

 7.1. Size:285K  international rectifier
 auirfr2905ztr.pdf pdf_icon

AUIRFR2307Z

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1m l Ultra Low On-Resistance l 175 C Operating Temperature max. 14.5m G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

 7.2. Size:204K  international rectifier
 auirfr2405.pdf pdf_icon

AUIRFR2307Z

PD - 97688A AUTOMOTIVE GRADE AUIRFR2405 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS 55V Dynamic dV/dT Rating RDS(on) typ. l Low On-Resistance 11.8m l 175 C Operating Temperature max 16m G l Fast Switching ID (Silicon Limited) 56A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 30A up to Tjmax l Lead-Free, R

MOSTRAR MÁS

Otros transistores... AUIRFP4468, AUIRFP4568, AUIRFP4668, AUIRFP4768, AUIRFR024N, AUIRFR1010Z, AUIRFR1018E, AUIRFR120Z, 7N65, AUIRFR2405, AUIRFR2407, AUIRFR2607Z, AUIRFR2905Z, AUIRFR3504, AUIRFR3504Z, AUIRFR3607, AUIRFR3710Z