AUIRFR3504 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFR3504
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 87 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 580 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0092 Ohm
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
AUIRFR3504 Datasheet (PDF)
auirfr3504.pdf

PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv
auirfr3504ztr.pdf

PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical
auirfr3504z.pdf

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description
auirfr3607 auirfu3607.pdf

AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CP650 | WM02N08L



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