AUIRFR3710Z Todos los transistores

 

AUIRFR3710Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFR3710Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 69 nC
   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

AUIRFR3710Z Datasheet (PDF)

 ..1. Size:278K  international rectifier
auirfr3710z.pdf pdf_icon

AUIRFR3710Z

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

 0.1. Size:272K  international rectifier
auirfr3710ztrl.pdf pdf_icon

AUIRFR3710Z

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

 7.1. Size:485K  international rectifier
auirfr3607 auirfu3607.pdf pdf_icon

AUIRFR3710Z

AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des

 7.2. Size:228K  international rectifier
auirfr3504.pdf pdf_icon

AUIRFR3710Z

PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TSM900N06CW | CSD85312Q3E

 

 
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