AUIRFR4105Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR4105Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0245 Ohm

Encapsulados: DPAK

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AUIRFR4105Z datasheet

 ..1. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf pdf_icon

AUIRFR4105Z

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 0.1. Size:317K  international rectifier
 auirfr4105ztr.pdf pdf_icon

AUIRFR4105Z

PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

 4.1. Size:238K  international rectifier
 auirfr4105tr.pdf pdf_icon

AUIRFR4105Z

PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 45m Dynamic dV/dT Rating G ID (Silicon Limited) 27A 175 C Operating Temperature Fast Switching ID (Package Limited) 20A S Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free,

 5.1. Size:317K  international rectifier
 auirfr4104tr.pdf pdf_icon

AUIRFR4105Z

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

MOSTRAR MÁS

Otros transistores... AUIRFR2905Z, AUIRFR3504, AUIRFR3504Z, AUIRFR3607, AUIRFR3710Z, AUIRFR3806, AUIRFR4104, AUIRFR4105, K3569, AUIRFR4615, AUIRFR4620, AUIRFR48Z, AUIRFR5305, AUIRFR5410, AUIRFR5505, AUIRFR6215, AUIRFR9024N