AUIRFR4615 Todos los transistores

 

AUIRFR4615 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFR4615
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET AUIRFR4615

 

AUIRFR4615 Datasheet (PDF)

 ..1. Size:289K  infineon
auirfr4615 auirfu4615.pdf

AUIRFR4615
AUIRFR4615

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

 6.1. Size:626K  infineon
auirfr4620.pdf

AUIRFR4615
AUIRFR4615

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip

 7.1. Size:317K  international rectifier
auirfr4104tr.pdf

AUIRFR4615
AUIRFR4615

PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q

 7.2. Size:281K  international rectifier
auirfr4292 auirfu4292.pdf

AUIRFR4615
AUIRFR4615

AUIRFR4292AUTOMOTIVE GRADEAUIRFU4292FeaturesHEXFET Power MOSFET Advanced Process TechnologyDV(BR)DSS 250V Low On-ResistanceRDS(on) typ. 275m 175C Operating TemperatureG Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax SID 9.3A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for Automotive applicatio

 7.3. Size:317K  international rectifier
auirfr4105ztr.pdf

AUIRFR4615
AUIRFR4615

PD - 97544AUTOMOTIVE GRADE AUIRFR4105ZAUIRFU4105ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyV(BR)DSS55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.24.5mG Fast Switching Repetitive Avalanche Allowed up to Tjmax IDS 30A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

 7.4. Size:292K  international rectifier
auirfr48ztr.pdf

AUIRFR4615
AUIRFR4615

PD - 97586AUTOMOTIVE GRADEAUIRFR48ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-ResistanceRDS(on) max.11m 175C Operating Temperature Fast Switching GID (Silicon Limited)62A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified *Des

 7.5. Size:238K  international rectifier
auirfr4105tr.pdf

AUIRFR4615
AUIRFR4615

PD - 97597AAUTOMOTIVE GRADEAUIRFR4105HEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.45m Dynamic dV/dT RatingGID (Silicon Limited)27A 175C Operating Temperature Fast SwitchingID (Package Limited)20AS Fully Avalanche Rated Repetitive Avalanche Allowedup toTjmax Lead-Free,

 7.6. Size:678K  infineon
auirfr48z.pdf

AUIRFR4615
AUIRFR4615

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 7.7. Size:719K  infineon
auirfr4292 auirfu4292.pdf

AUIRFR4615
AUIRFR4615

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features VDSS 250V Advanced Process Technology RDS(on) typ. 275m Low On-Resistance max. 175C Operating Temperature 345m Fast Switching ID 9.3A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifical

 7.8. Size:715K  infineon
auirfr4104 auirfu4104.pdf

AUIRFR4615
AUIRFR4615

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 7.9. Size:720K  infineon
auirfr4105z auirfu4105z.pdf

AUIRFR4615
AUIRFR4615

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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