AUIRFR4620 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR4620

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 144 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22.4 nS

Cossⓘ - Capacitancia de salida: 125 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm

Encapsulados: DPAK

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AUIRFR4620 datasheet

 ..1. Size:626K  infineon
 auirfr4620.pdf pdf_icon

AUIRFR4620

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175 C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip

 6.1. Size:289K  international rectifier
 auirfr4615 auirfu4615.pdf pdf_icon

AUIRFR4620

PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo

 7.1. Size:317K  international rectifier
 auirfr4104tr.pdf pdf_icon

AUIRFR4620

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

 7.2. Size:281K  international rectifier
 auirfr4292 auirfu4292.pdf pdf_icon

AUIRFR4620

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275m 175 C Operating Temperature G Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio

MOSTRAR MÁS

Otros transistores... AUIRFR3504Z, AUIRFR3607, AUIRFR3710Z, AUIRFR3806, AUIRFR4104, AUIRFR4105, AUIRFR4105Z, AUIRFR4615, 4435, AUIRFR48Z, AUIRFR5305, AUIRFR5410, AUIRFR5505, AUIRFR6215, AUIRFR9024N, AUIRFS3004, AUIRFS3004-7P