BFR30 Todos los transistores

 

BFR30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFR30
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2000 Ohm
   Paquete / Cubierta: SOT23

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BFR30 Datasheet (PDF)

 ..1. Size:136K  motorola
bfr30 bfr31.pdf

BFR30
BFR30

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR30LT1/DJFET AmplifiersBFR30LT1NChannelBFR31LT12 SOURCE33GATE121 DRAINCASE 31808, STYLE 10SOT23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 25 VdcGateSource Voltage VGS 25 VdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Diss

 0.1. Size:77K  philips
bfr30-bfr31 2.pdf

BFR30
BFR30

DISCRETE SEMICONDUCTORSDATA SHEETBFR30; BFR31N-channel field-effect transistorsProduct specification 1997 Dec 05Supersedes data of April 1991File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors BFR30; BFR31DESCRIPTIONPlanar epitaxial symmetrical junction N-channel3handbook, halfpagefield-effect transist

 0.2. Size:271K  philips
bfr30-bfr31.pdf

BFR30
BFR30

DISCRETE SEMICONDUCTORS DATA SHEETBFR30; BFR31N-channel field-effect transistorsProduct specification 1997 Dec 05Supersedes data of April 1991NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31DESCRIPTIONPlanar epitaxial symmetrical junction N-channel 3handbook, halfpagefield-effect transistor in a plastic SOT23 package.dgsA

 0.3. Size:59K  onsemi
bfr30lt1 bfr31lt1.pdf

BFR30
BFR30

BFR30LT1, BFR31LT1JFET AmplifiersN-ChannelFeatures Pb-Free Package is Availablehttp://onsemi.com2 SOURCE3GATEMAXIMUM RATINGSRating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc

Otros transistores... BFC48 , BFC49 , BFC50 , BFC51 , BFC52 , BFC61 , BFC62 , BFC63 , IRF1010E , BFR31 , BFR84 , BFS28R , BFT46 , BS107P , BS107PT , BS108 , BS170 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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