AUIRFS3006-7P Todos los transistores

 

AUIRFS3006-7P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFS3006-7P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 293 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 1007 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO263-7
 

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AUIRFS3006-7P Datasheet (PDF)

 ..1. Size:682K  infineon
 auirfs3006-7p.pdf pdf_icon

AUIRFS3006-7P

AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS

 4.1. Size:667K  infineon
 auirfs3006.pdf pdf_icon

AUIRFS3006-7P

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

 5.1. Size:453K  infineon
 auirfs3004-7p.pdf pdf_icon

AUIRFS3006-7P

AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.90m Ultra Low On-Resistance 175C Operating Temperature max. 1.25m Fast Switching ID (Silicon Limited) 400A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Q

 5.2. Size:711K  infineon
 auirfs3004 auirfsl3004.pdf pdf_icon

AUIRFS3006-7P

AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.4m Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching ID (Silicon Limited) 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant

MOSTRAR MÁS

Otros transistores... AUIRFR5305 , AUIRFR5410 , AUIRFR5505 , AUIRFR6215 , AUIRFR9024N , AUIRFS3004 , AUIRFS3004-7P , AUIRFS3006 , IRLZ44N , AUIRFS3107 , AUIRFS3107-7P , AUIRFS3206 , AUIRFS3207Z , AUIRFS3306 , AUIRFS3307Z , AUIRFS3607 , AUIRFS3806 .

History: UTC654 | SVF13N50S | IPB015N08N5 | AM30N08-80D | AON7702B | CS8N65F

 

 
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