AUIRFS4010-7P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFS4010-7P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 380 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 190 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO263-7

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AUIRFS4010-7P datasheet

 ..1. Size:702K  infineon
 auirfs4010-7p.pdf pdf_icon

AUIRFS4010-7P

AUTOMOTIVE GRADE AUIRFS4010-7P HEXFET Power MOSFET VDSS 100V Features RDS(on) typ. 3.3m Advanced Process Technology Ultra Low On-Resistance max. 4.0m Enhanced dV/dT and dI/dT capability ID 190A 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

 4.1. Size:711K  infineon
 auirfs4010 auirfsl4010.pdf pdf_icon

AUIRFS4010-7P

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175 C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 7.1. Size:340K  international rectifier
 auirfs4610trl.pdf pdf_icon

AUIRFS4010-7P

PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 100V Enhanced dV/dT and dI/dT capability RDS(on) typ. 11m 175 C Operating Temperature Fast Switching max. 14m G Repetitive Avalanche Allowed up to Tjmax ID 73A Lead-Free, RoHS Compliant S Automotive Qualified * D Descripti

 7.2. Size:289K  international rectifier
 auirfs4410z auirfsl4410z.pdf pdf_icon

AUIRFS4010-7P

PD - 96405A AUTOMOTIVE GRADE AUIRFS4410Z AUIRFSL4410Z Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D VDSS 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) typ. 7.2m l Lead-Free, RoHS Compliant max. 9.0m G l Automotive Qualified * ID 97A S Description Specifically desig

MOSTRAR MÁS

Otros transistores... AUIRFS3107-7P, AUIRFS3206, AUIRFS3207Z, AUIRFS3306, AUIRFS3307Z, AUIRFS3607, AUIRFS3806, AUIRFS4010, 4N60, AUIRFS4115, AUIRFS4115-7P, AUIRFS4127, AUIRFS4310, AUIRFS4310Z, AUIRFS4321, AUIRFS4410Z, AUIRFS4610