AUIRFU4105Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFU4105Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0245 Ohm

Encapsulados: IPAK

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AUIRFU4105Z datasheet

 ..1. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf pdf_icon

AUIRFU4105Z

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 5.1. Size:715K  infineon
 auirfr4104 auirfu4104.pdf pdf_icon

AUIRFU4105Z

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 7.1. Size:281K  international rectifier
 auirfr4292 auirfu4292.pdf pdf_icon

AUIRFU4105Z

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275m 175 C Operating Temperature G Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio

 7.2. Size:289K  international rectifier
 auirfr4615 auirfu4615.pdf pdf_icon

AUIRFU4105Z

PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo

MOSTRAR MÁS

Otros transistores... AUIRFSL4010, AUIRFSL4227, AUIRFSL4310, AUIRFSL4410Z, AUIRFU024N, AUIRFU120Z, AUIRFU3607, AUIRFU4104, IRFZ46N, AUIRFU4615, AUIRFU5305, AUIRFU5505, AUIRFU9024N, AUIRFZ24NL, AUIRFZ24NS, AUIRFZ34N, AUIRFZ44N