AUIRLL2705 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLL2705

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 3.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT223

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AUIRLL2705 datasheet

 ..1. Size:246K  international rectifier
 auirll2705.pdf pdf_icon

AUIRLL2705

AUTOMOTIVE GRADE AUIRLL2705 Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance V(BR)DSS 55V l Logic Level Gate Drive RDS(on) max. l Dynamic dv/dt Rating 0.04 G l 150 C Operating Temperature S ID 3.8A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S

 8.1. Size:198K  international rectifier
 auirll024n.pdf pdf_icon

AUIRLL2705

AUTOMOTIVE GRADE AUIRLL024N Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 0.065 150 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description

 8.2. Size:548K  international rectifier
 auirll014n.pdf pdf_icon

AUIRLL2705

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150 C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

 8.3. Size:228K  international rectifier
 auirll024z.pdf pdf_icon

AUIRLL2705

PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 150 C Operating Temperature RDS(on) typ. 48m Fast Switching G max. 60m Repetitive Avalanche Allowed up to Tjmax S ID 5.0A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

MOSTRAR MÁS

Otros transistores... AUIRL7732S2TR, AUIRL7766M2, AUIRLB3034, AUIRLB3036, AUIRLB4030, AUIRLI2505, AUIRLL014N, AUIRLL024N, P55NF06, AUIRLR014N, AUIRLR024N, AUIRLR024Z, AUIRLR120N, AUIRLR2703, AUIRLR2905, AUIRLR2905Z, AUIRLR2908