AUIRLR3110Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLR3110Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 63 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: DPAK

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AUIRLR3110Z datasheet

 ..1. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf pdf_icon

AUIRLR3110Z

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

 5.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf pdf_icon

AUIRLR3110Z

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 6.1. Size:619K  international rectifier
 auirlr3105.pdf pdf_icon

AUIRLR3110Z

PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A

 7.1. Size:246K  international rectifier
 auirlr3410trl.pdf pdf_icon

AUIRLR3110Z

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

MOSTRAR MÁS

Otros transistores... AUIRLR024N, AUIRLR024Z, AUIRLR120N, AUIRLR2703, AUIRLR2905, AUIRLR2905Z, AUIRLR2908, AUIRLR3105, IRF9540N, AUIRLR3114Z, AUIRLR3410, AUIRLR3636, AUIRLR3705Z, AUIRLR3714, AUIRLR3915, AUIRLS3034, AUIRLS3034-7P