AUIRLS3036-7P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLS3036-7P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 380 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 300 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 540 nS

Cossⓘ - Capacitancia de salida: 1025 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm

Encapsulados: TO263-7

 Búsqueda de reemplazo de AUIRLS3036-7P MOSFET

- Selecciónⓘ de transistores por parámetros

 

AUIRLS3036-7P datasheet

 ..1. Size:688K  infineon
 auirls3036-7p.pdf pdf_icon

AUIRLS3036-7P

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175 C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 4.1. Size:288K  international rectifier
 auirls3036.pdf pdf_icon

AUIRLS3036-7P

AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 5.1. Size:680K  infineon
 auirls3034.pdf pdf_icon

AUIRLS3036-7P

AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175 C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax

 5.2. Size:699K  infineon
 auirls3034-7p.pdf pdf_icon

AUIRLS3036-7P

AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175 C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

MOSTRAR MÁS

Otros transistores... AUIRLR3410, AUIRLR3636, AUIRLR3705Z, AUIRLR3714, AUIRLR3915, AUIRLS3034, AUIRLS3034-7P, AUIRLS3036, 13N50, AUIRLS4030, AUIRLS4030-7P, AUIRLU024N, AUIRLU3110Z, AUIRLU3114Z, AUIRLZ44Z, IRF5803, IRF5803D2