IRF6217 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF6217

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.2 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: SO8

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IRF6217 datasheet

 ..1. Size:105K  international rectifier
irf6217.pdf pdf_icon

IRF6217

PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 2.4 @VGS =-10V -0.7A DC to DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN100

 ..2. Size:125K  international rectifier
irf6217pbf.pdf pdf_icon

IRF6217

PD - 95252 IRF6217PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset -150V 2.4W@VGS =-10V -0.7A DC to DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN1001)

 0.1. Size:194K  international rectifier
irf6217pbf-1.pdf pdf_icon

IRF6217

IRF6217PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 2.4 2 7 S D (@V = -10V) GS Qg (typical) 6 nC 3 6 S D ID 4 5 -0.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment

 8.1. Size:124K  international rectifier
irf6216pbf.pdf pdf_icon

IRF6217

SMPS MOSFET PD - 95293 IRF6216PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset DC-DC converters -150V 0.240W@VGS =-10V -2.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001) 4

Otros transistores... AUIRLU3110Z, AUIRLU3114Z, AUIRLZ44Z, IRF5803, IRF5803D2, IRF5805, IRF5806, IRF6216, IRFP450, IRF6218, IRF6218S, IRF7210, IRF7240, IRF7241, IRF7326D2, IRF7342D2, IRF7404Q