IRF7404Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7404Q

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 730 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SO8

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IRF7404Q datasheet

 ..1. Size:242K  international rectifier
 irf7404qpbf.pdf pdf_icon

IRF7404Q

PD - 96127A IRF7404QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.040 l Lead-Free Top View Description These HEXFET Power MOSFET's in package utilize the lastest processing techniqu

 7.1. Size:234K  international rectifier
 irf7404pbf-1.pdf pdf_icon

IRF7404Q

IRF7404TRPbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25 C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie

 7.2. Size:163K  international rectifier
 irf7404.pdf pdf_icon

IRF7404Q

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

 7.3. Size:231K  international rectifier
 irf7404pbf.pdf pdf_icon

IRF7404Q

PD - 95203 IRF7404PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 S D l Surface Mount 3 6 S l Available in Tape & Reel D 4 5 l Dynamic dv/dt Rating G D RDS(on) = 0.040 l Fast Switching Top View l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

MOSTRAR MÁS

Otros transistores... IRF6217, IRF6218, IRF6218S, IRF7210, IRF7240, IRF7241, IRF7326D2, IRF7342D2, 10N65, IRF7410, IRF7416Q, IRF7420, IRF7424, IRF7425, IRF7700G, IRF7701G, IRF7702