IRF7425 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7425
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1480 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0082 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de IRF7425 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF7425 datasheet
..1. Size:192K international rectifier
irf7425pbf.pdf 
IRF7425PbF HEXFET Power MOSFET VDS -20 V A 1 8 RDS(on) max S D 8.2 (@V = -4.5V) 2 7 GS S D m RDS(on) max 3 6 13 S D (@V = -2.5V) GS 4 5 Qg (typical) 87 nC G D ID -15 A SO-8 Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co
..2. Size:91K international rectifier
irf7425.pdf
PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET 20V 8.2@VGS = -4.5V -15A Surface Mount 13@VGS = -2.5V -13A Available in Tape & Reel A 1 8 Description S D These P-Channel HEXFET Power MOSFETs from 2 7 S D International Rectifier utilize advanced processing 3 6 techniques to achieve the ex
0.1. Size:182K international rectifier
irf7425pbf-1.pdf
IRF7425PbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 8.2 2 7 (@V = -4.5V) S D GS m RDS(on) max 3 6 S D 13 (@V = -2.5V) GS 4 5 G D Qg (typical) 87 nC ID SO-8 -15 A Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoH
0.2. Size:1476K cn vbsemi
irf7425tr.pdf
IRF7425TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G
8.1. Size:122K international rectifier
irf7424pbf.pdf
PD- 95343 IRF7424PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 13.5@VGS = -10V -11A l Surface Mount 22@VGS = -4.5V -8.8A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-resista
8.2. Size:223K international rectifier
irf7421d1pbf.pdf
PD- 95304 IRF7421D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V l Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035 l Generation V Technology 4 5 G D l SO-8 Footprint Schottky Vf = 0.39V l Lead-Free Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky
8.3. Size:153K international rectifier
irf7420pbf.pdf
PD - 95633A IRF7420PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 14m @VGS = -4.5V -11.5A l Surface Mount 17.5m @VGS = -2.5V -9.8A l Available in Tape & Reel 26m @VGS = -1.8V -8.1A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniq
8.4. Size:119K international rectifier
irf7422d2.pdf
PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode A Co-packaged HEXFET Power A 1 8 A D MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal For Buck Regulator Applications A D P-Channel HEXFET 3 6 RDS(on) = 0.09 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-pack
8.5. Size:374K international rectifier
irf7422d2pbf.pdf
PD - 95310 IRF7422D2PbF Lead-Free www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com IRF7422D2PbF www.irf.com 5 IRF7422D2PbF 6 www.irf.com IRF7422D2PbF SO-8 (Fetky) Package Outline INCHES MILLIMET ERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c
8.6. Size:229K international rectifier
irf7424.pdf
PD- 94024A IRF7424 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -30V 13.5@VGS = -10V -11A Surface Mount 22@VGS = -4.5V -8.8A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-
8.7. Size:178K international rectifier
irf7421d1.pdf
PD- 91411C IRF7421D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035 Generation V Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEX
8.8. Size:190K international rectifier
irf7420pbf-1.pdf
IRF7420PbF-1 HEXFET Power MOSFET A 1 8 VDS -12 V S D RDS(on) max 2 7 S D 14 m (@V = -4.5V) GS 3 6 S D RDS(on) max 17.5 m 4 5 (@V = -2.5V) GS G D RDS(on) max 26 m SO-8 Top View (@V = -1.8V) GS Qg (typical) 38 nC ID -11.5 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Sur
8.9. Size:103K international rectifier
irf7420.pdf
PD - 94278 IRF7420 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 14m @VGS = -4.5V -11.5A Surface Mount 17.5m @VGS = -2.5V -9.8A Available in Tape & Reel 26m @VGS = -1.8V -8.1A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the ex
8.10. Size:199K international rectifier
irf7424gpbf.pdf
PD-96256 IRF7424GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 13.5@VGS = -10V -11A l Surface Mount 22@VGS = -4.5V -8.8A l Available in Tape & Reel l Lead-Free l Halogen-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremel
8.13. Size:873K cn vbsemi
irf7424trpbf.pdf
IRF7424TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop
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