IRF9392 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9392
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 9.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 47 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de IRF9392 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF9392 datasheet
..1. Size:282K international rectifier
irf9392pbf.pdf 
PD - 97571 IRF9392PbF HEXFET Power MOSFET VDS -30 V VGS max 25 V RDS(on) max 17.5 m (@VGS = -10V) ID -9.8 A (@TA = 25 C) SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features Resulting Benefits 25V VGS max Direct Drive at High VGS Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromi
8.1. Size:256K international rectifier
irf9393pbf.pdf
PD - 97522A IRF9393PbF HEXFET Power MOSFET VDS -30 V S 18 D VGS max 25 V S 27 D RDS(on) max 19.4 m (@VGS = -10V) S 3 6 D ID G 4 5 D -9.2 A (@TA = 25 C) SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V VGS max Direct Drive at High VGS Industry-Standard SO8 Package Multi-Vendor Compatibility Environm
8.2. Size:248K international rectifier
irf9395mpbf.pdf
IRF9395MPbF DirectFET dual P-Channel Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max 20V max 5.3m @-10V 9.0m @-4.5V Applications Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Isolation Switch for Input Power or Battery Application 32nC 15nC 3.2nC 62nC 23nC -1.8V Features and Benefits Q1-Q2 l Environmentaly Friendly Product G G l RoHs Com
9.1. Size:219K international rectifier
irf9317pbf.pdf
PD - 97465 IRF9317PbF HEXFET Power MOSFET VDS -30 V S 18 D RDS(on) max 6.6 m S 27 D (@VGS = -10V) RDS(on) max S 3 6 D 10.2 m (@VGS = -4.5V) G 4 5 D Qg (typical) 31 nC SO-8 ID -16 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor
9.2. Size:308K international rectifier
irf9388pbf.pdf
PD - 97521 IRF9388PbF HEXFET Power MOSFET VDS -30 V VGS max 25 V RDS(on) max 11.9 m (@VGS = -10V) ID -12 A (@TA = 25 C) SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V VGS max Direct Drive at High VGS Industry-Standard SO8 Package Multi-Vendor Compatibility Environmentally Friendlier RoHS Compliant
9.3. Size:232K international rectifier
irf9310pbf-1.pdf
IRF9310PbF-1 HEXFET Power MOSFET VDS -30 V RDS(on) max S 18 D 4.6 (@V = -10V) GS m S 27 D RDS(on) max 6.8 (@V = -4.5V) GS S 3 6 D Qg (typical) 58 nC G 4 5 D ID -20 A SO-8 (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halo
9.4. Size:266K international rectifier
irf9335pbf.pdf
PD - 96311A IRF9335PbF HEXFET Power MOSFET VDS -30 V S 18 D RDS(on) max 59 m S 27 D (@VGS = -10V) S 3 6 D RDS(on) max 110 m (@VGS = -4.5V) G 4 5 D Qg (typical) 9.1 nC SO-8 ID -5.4 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Features and Benefits Features Resulting Benefits Industry-S
9.5. Size:275K international rectifier
irf9358pbf.pdf
PD - 97616 IRF9358PbF HEXFET Power MOSFET VDS -30 V S2 1 8 D2 D RDS(on) max 16.3 m G 2 7 D2 2 (@VGS = -10V) RDS(on) max S1 3 6 D1 D 23.8 m (@VGS = -4.5V) G 4 5 D1 1 Qg (typical) 19 nC SO-8 ID -9.2 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Industry-Standa
9.6. Size:286K international rectifier
irf9362pbf.pdf
PD - 96312A IRF9362PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 21.0 m (@VGS = -10V) RDS(on) max 32.0 m (@VGS = -4.5V) Qg (typical) 13 nC SO-8 Top View ID -8.0 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor
9.7. Size:244K international rectifier
irf9389pbf.pdf
IRF9389PbF HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 S1 D1 VDS 30 -30 V 2 7 G1 D1 RDS(on) max 27 64 m 3 6 S2 D2 Qg (typical) 6.8 8.1 nC 4 5 G2 D2 P-CHANNEL MOSFET ID Top View SO-8 6.8 -4.6 A (@TA = 25 C) Applications l High and Low Side Switches for Inverter l High and Low Side Switches for Generic Half-Bridge Features Benefits High and low-side MOSFETs i
9.8. Size:315K international rectifier
irf9328pbf.pdf
PD - 97518 IRF9328PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 11.9 m (@VGS = -10V) RDS(on) max 19.7 m (@VGS = -4.5V) Qg (typical) 18 nC SO-8 ID -12 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compli
9.9. Size:244K international rectifier
irf9389.pdf
IRF9389PbF HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 S1 D1 VDS 30 -30 V 2 7 G1 D1 RDS(on) max 27 64 m 3 6 S2 D2 Qg (typical) 6.8 8.1 nC 4 5 G2 D2 P-CHANNEL MOSFET ID Top View SO-8 6.8 -4.6 A (@TA = 25 C) Applications l High and Low Side Switches for Inverter l High and Low Side Switches for Generic Half-Bridge Features Benefits High and low-side MOSFETs i
9.10. Size:312K international rectifier
irf9333pbf.pdf
PD - 97523 IRF9333PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 19.4 m (@VGS = -10V) RDS(on) max 32.5 m (@VGS = -4.5V) Qg (typical) 14 nC SO-8 ID -9.2 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Complian
9.11. Size:283K international rectifier
irf9332pbf.pdf
PD - 97561 IRF9332PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 17.5 m (@VGS = -10V) RDS(on) max 28.1 m (@VGS = -4.5V) Qg (typical) 14 nC SO-8 ID -9.8 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in M
9.12. Size:242K international rectifier
irf9383mpbf.pdf
IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values (unless otherwise specified) Applications l Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications -30V max 20V max 2.3m @-10V 3.8m @-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits 67nC 29nC 9.4nC 315nC 59nC -1.8V l Environmentaly
9.13. Size:270K international rectifier
irf9321pbf.pdf
PD - 95960 IRF9321PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 7.2 m (@VGS = -10V) RDS(on) max 11.2 m (@VGS = -4.5V) Qg (typical) 34 nC SO-8 ID -15 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor Compatibility
9.14. Size:277K international rectifier
irf9310pbf.pdf
PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 4.6 m (@VGS = 10V) ID -20 A (@TA = 25 C) SO-8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Low RDSon ( 4.6m ) Lower Conduction Losses results in Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS
9.15. Size:2418K slkor
irf9317tr.pdf
IRF9317TR P-Channel 30 V (D-S) MOSFET Description This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. D D It can be used in a wide variety of applications. D S1 S S Features G 1) VDS=-30V,ID=-15A,RDS(ON)
9.16. Size:844K cn vbsemi
irf9335trpbf.pdf
IRF9335TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D
9.17. Size:891K cn vbsemi
irf9389tr.pdf
IRF9389TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG
9.18. Size:815K cn vbsemi
irf9332tr.pdf
IRF9332TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC
9.19. Size:812K cn vbsemi
irf9310trpbf-9.pdf
IRF9310TRPBF&-9 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2
Otros transistores... IRF9310
, IRF9317
, IRF9321
, IRF9328
, IRF9332
, IRF9333
, IRF9335
, IRF9388
, AON7403
, IRF9393
, IRFH9310
, IRFHM9331
, IRFHS9301
, IRFR9024NC
, IRFTS9342
, IRLHS2242
, IRLIB9343
.
