IRF9393 Todos los transistores

 

IRF9393 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9393

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 9.2 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0194 Ohm

Empaquetado / Estuche: SO8

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IRF9393 Datasheet (PDF)

1.1. irf9393pbf.pdf Size:256K _upd-mosfet

IRF9393
IRF9393

PD - 97522A IRF9393PbF HEXFET® Power MOSFET VDS -30 V S 18 D VGS max ±25 V S 27 D RDS(on) max 19.4 mΩ (@VGS = -10V) S 3 6 D ID G 4 5 D -9.2 A (@TA = 25°C) SO-8 Applications • Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V VGS max Direct Drive at High VGS Industry-Standard SO8 Package Multi-Vendor Compatibility Environm

4.1. irf9392pbf.pdf Size:282K _upd-mosfet

IRF9393
IRF9393

PD - 97571 IRF9392PbF HEXFET® Power MOSFET VDS -30 V VGS max ±25 V RDS(on) max 17.5 mΩ (@VGS = -10V) ID -9.8 A (@TA = 25°C) SO-8 Applications • Adaptor Input Switch for Notebook PC Features and Benefits Features Resulting Benefits 25V VGS max Direct Drive at High VGS Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromi

4.2. irf9395mpbf.pdf Size:290K _upd-mosfet

IRF9393
IRF9393

PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Isolation Switch for Input Power or Battery Application 32nC 15nC 3.2nC 62nC 23nC -1.8V Features and Benefits Q1-Q2 l Environmentaly Fri

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