IRLHS2242 Todos los transistores

 

IRLHS2242 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLHS2242

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 9.6 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.031 Ohm

Empaquetado / Estuche: PQFN2X2

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IRLHS2242 Datasheet (PDF)

1.1. irlhs2242pbf.pdf Size:264K _international_rectifier

IRLHS2242
IRLHS2242

IRLHS2242PbF HEXFET® Power MOSFET VDS -20 V TOP VIEW VGS max ±12 V RDS(on) max 31 mΩ D D 1 6 D (@VGS = 4.5V) D G D RDS(on) max D 2 D 5 D 53 mΩ (@VGS = 2.5V) D D S Qg typ S 9.6 S nC G 3 4 S 2mm x 2mm PQFN ID -8.5 A (@Tc(Bottom) = 25°C) Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features

5.1. irlhs6276pbf.pdf Size:288K _international_rectifier

IRLHS2242
IRLHS2242

IRLHS6276PbF HEXFET® Power MOSFET VDS 20 V VGS ±12 V RDS(on) max D1 45 m Ω G2 (@VGS = 4.5V) S2 D1 D2 RDS(on) max 62 m Ω (@VGS = 2.5V) S1 G1 ID D2 3.4 A (@Tc(Bottom) = 25°C) 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 45mΩ)

5.2. irlhs6342pbf.pdf Size:263K _international_rectifier

IRLHS2242
IRLHS2242

IRLHS6342PbF HEXFET® Power MOSFET VDS 30 V TOP VIEW VGS ±12 V D 1 6 D RDS(on) max D 15.5 mΩ D (@VGS = 4.5V) G D 2 D 5 D D Qg (typical) 11 nC S G 3 4 S D ID D S 12 A S (@TC (Bottom) = 25°C) 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (≤

 5.3. irlhs6242pbf.pdf Size:219K _international_rectifier

IRLHS2242
IRLHS2242

PD - 97582B IRLHS6242PbF HEXFET® Power MOSFET VDS 20 V VGS V ±12 RDS(on) max 11.7 mΩ D (@VGS = 4.5V) D G D RDS(on) max 15.5 mΩ (@VGS = 2.5V) D ID D S 12 A S (@TC (Bottom) = 25°C) 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 11.7mΩ)

5.4. irlhs6376pbf.pdf Size:290K _international_rectifier

IRLHS2242
IRLHS2242

IRLHS6376PbF HEXFET® Power MOSFET VDS 30 V VGS 12 V ± D1 RDS(on) max 63 m G2 Ω (@VGS = 4.5V) S2 D1 D2 RDS(on) max 82 m Ω (@VGS = 2.5V) S1 G1 ID D2 3.4 A (@Tc(Bottom) = 25°C) 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 63mΩ)

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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