IRLHS2242 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLHS2242
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 54 nS
Cossⓘ - Capacitancia de salida: 273 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
Paquete / Cubierta: PQFN2X2
Búsqueda de reemplazo de MOSFET IRLHS2242
IRLHS2242 Datasheet (PDF)
irlhs2242pbf.pdf
IRLHS2242PbFHEXFET Power MOSFETVDS-20 VTOP VIEWVGS max12 VRDS(on) max 31 mDD 1 6 D(@VGS = 4.5V)DGDRDS(on) max D 2 D 5 D53 m(@VGS = 2.5V)DDSQg typS9.6 SnC G 3 4 S2mm x 2mm PQFNID -8.5 A(@Tc(Bottom) = 25C)Applicationsl Charge and Discharge Switch for Battery Applicationl System/load switchFeatures and BenefitsFeatures
irlhs6276pbf.pdf
IRLHS6276PbFHEXFET Power MOSFETVDS20 VVGS12 VRDS(on) max D145 mG2(@VGS = 4.5V)S2 D1D2RDS(on) max 62 m(@VGS = 2.5V)S1G1ID D23.4 A(@Tc(Bottom) = 25C)2mm x 2mm Dual PQFNApplications Charge and discharge switch for battery application Load/System SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 45m)
irlhs6342pbf.pdf
IRLHS6342PbFHEXFET Power MOSFETVDS30 VTOP VIEWVGS12 VD 1 6 DRDS(on) max D15.5 mD(@VGS = 4.5V)GD 2 D 5 D DQg (typical) 11 nCSG 3 4 SDIDDS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon (
irlhs6242pbf.pdf
PD - 97582BIRLHS6242PbFHEXFET Power MOSFETVDS20 VVGS V12RDS(on) max 11.7 mD(@VGS = 4.5V)DGDRDS(on) max 15.5 m(@VGS = 2.5V)DIDDS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 11.7m)
irlhs6376pbf.pdf
IRLHS6376PbFHEXFET Power MOSFETVDS30 VVGS 12 VD1RDS(on) max 63 m G2(@VGS = 4.5V)S2 D1D2RDS(on) max 82 m(@VGS = 2.5V)S1G1ID D23.4 A(@Tc(Bottom) = 25C)2mm x 2mm Dual PQFNApplications Charge and discharge switch for battery application Load/System SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 63m)
irlhs6242pbf.pdf
IRLHS6242PbFHEXFET Power MOSFETVDS20 VTOP VIEWVGS V12RDS(on) max D 1 6 D11.7 mD(@VGS = 4.5V)DGDRDS(on) max D 2 D 5 D15.5 m(@VGS = 2.5V)DIDSDG 3 4 SS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting Benef
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
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