IRLML5203 Todos los transistores

 

IRLML5203 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLML5203
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET IRLML5203

 

IRLML5203 Datasheet (PDF)

 ..1. Size:137K  international rectifier
irlml5203.pdf

IRLML5203
IRLML5203

PD - 93967PROVISIONALIRLML5203HEXFET Power MOSFET)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel MOSFETs from International RectifierG 1utilize advanced processing techniques to achieve theextre

 ..2. Size:194K  international rectifier
irlml5203pbf.pdf

IRLML5203
IRLML5203

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

 ..3. Size:194K  infineon
irlml5203pbf.pdf

IRLML5203
IRLML5203

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

 ..4. Size:122K  tysemi
irlml5203pbf.pdf

IRLML5203
IRLML5203

Product specificationIRLML5203PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the

 ..5. Size:2039K  umw-ic
irlml5203.pdf

IRLML5203
IRLML5203

RUMWUMW IRLML5203UMW IRLML5203UMW IRLML5203SOT-23 Plastic-Encapsulate MOSFETS SOT23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX \85m@-10 V1. BASE -3.0A-30V145m@-4.5V2. EMITTER 3. COLLECTORGeneral Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit

 ..6. Size:477K  huashuo
irlml5203.pdf

IRLML5203
IRLML5203

IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability

 ..7. Size:1417K  cn shikues
irlml5203.pdf

IRLML5203
IRLML5203

IRLML5203

 0.1. Size:194K  international rectifier
irlml5203gpbf.pdf

IRLML5203
IRLML5203

PD - 96166IRLML5203GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescription These P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the extremel

 0.2. Size:195K  international rectifier
irlml5203pbf-1.pdf

IRLML5203
IRLML5203

IRLML5203PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max 98G 1(@V = -10V)GSmRDS(on) max 165 3 D(@V = -4.5V)GSQg (typical) 9.5 nCS 2ID -3.0 A Micro3TM(@T = 25C)AFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Env

 0.3. Size:914K  cn vbsemi
irlml5203trpbf.pdf

IRLML5203
IRLML5203

IRLML5203TRPBFwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IRLML5203
  IRLML5203
  IRLML5203
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top