IRLML5203 Todos los transistores

 

IRLML5203 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLML5203

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Resistencia drenaje-fuente RDS(on): 0.098 Ohm

Empaquetado / Estuche: SOT23

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IRLML5203 Datasheet (PDF)

1.1. irlml5203.pdf Size:137K _international_rectifier

IRLML5203
IRLML5203

PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount 165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier G 1 utilize advanced processing techniques to achieve the extremely low on-re

1.2. irlml5203gpbf.pdf Size:194K _international_rectifier

IRLML5203
IRLML5203

PD - 96166 IRLML5203GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremel

 1.3. irlml5203pbf-1.pdf Size:195K _international_rectifier

IRLML5203
IRLML5203

IRLML5203PbF-1 HEXFET® Power MOSFET VDS -30 V RDS(on) max 98 G 1 (@V = -10V) GS mΩ RDS(on) max 165 3 D (@V = -4.5V) GS Qg (typical) 9.5 nC S 2 ID -3.0 A Micro3TM (@T = 25°C) A Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing ⇒ RoHS Compliant, Halogen-Free Env

1.4. irlml5203pbf.pdf Size:194K _international_rectifier

IRLML5203
IRLML5203

IRLML5203PbF l Ultra Low On-Resistance HEXFET® Power MOSFET l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Surface Mount l Available in Tape & Reel -30V 98@VGS = -10V -3.0A l Low Gate Charge 165@VGS = -4.5V -2.6A l Lead-Free l RoHS Compliant, Halogen-Free Description G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ext

 1.5. irlml5203pbf.pdf Size:122K _tysemi

IRLML5203
IRLML5203

Product specification IRLML5203PbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the

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