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IRLML9301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLML9301

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.6 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.064 Ohm

Empaquetado / Estuche: SOT23

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IRLML9301 Datasheet (PDF)

1.1. irlml9301trpbf.pdf Size:162K _tysemi

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IRLML9301

Product specification IRLML9301TRPbF HEXFET® Power MOSFET VDS -30 V VGS Max ± 20 V G 1 RDS(on) max 64 mΩ 3 D (@VGS = -10V) RDS(on) max S 2 103 mΩ Micro3TM (SOT-23) (@VGS = -4.5V) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 64mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibility

2.1. irlml9303trpbf.pdf Size:145K _tysemi

IRLML9301
IRLML9301

Product specification IRLML9303TRPbF HEXFET® Power MOSFET VDS -30 V VGS Max ± 20 V RDS(on) max 165 m (@VGS = -10V) RDS(on) max 270 m Micro3TM (SOT-23) (@VGS = -4.5V) IRLML9303TRPbF Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques resu

5.1. irlml6246pbf.pdf Size:218K _international_rectifier

IRLML9301
IRLML9301

PD - 97529A IRLML6246TRPbF HEXFET® Power MOSFET VDS 20 V G 1 VGS Max ± 12 V RDS(on) max 3 D 46 m (@VGS = 4.5V) RDS(on) max S 2 Micro3TM (SOT-23) 66 m IRLML6246TRPbF (@VGS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no h

5.2. irlml6401.pdf Size:210K _international_rectifier

IRLML9301
IRLML9301

PD- 93756C IRLML6401 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (<1.1mm) VDSS = -12V Available in Tape and Reel 3 D Fast Switching RDS(on) = 0.05? S 2 1.8V Gate Rated Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar

5.3. irlml5203.pdf Size:137K _international_rectifier

IRLML9301
IRLML9301

PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount 165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier G 1 utilize advanced processing techniques to achieve the extremely low on-re

5.4. irlml2060pbf.pdf Size:218K _international_rectifier

IRLML9301
IRLML9301

PD - 97448A IRLML2060TRPbF HEXFET® Power MOSFET VDS 60 V VGS Max ± 16 V RDS(on) max 480 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 640 m IRLML2060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

5.5. irlml6344pbf.pdf Size:221K _international_rectifier

IRLML9301
IRLML9301

IRLML6344TRPbF HEXFET® Power MOSFET VDS 30 V G 1 VGS Max ± 12 V RDS(on) max 3 D 29 mΩ (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 mΩ IRLML6344TRPbF (@VGS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ) Lower Conduction Losses Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing n

5.6. irlml0030pbf.pdf Size:200K _international_rectifier

IRLML9301
IRLML9301

PD - 96278B IRLML0030TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 20 V G 1 RDS(on) max 27 mΩ 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 mΩ (@VGS = 4.5V) IRLML0030TRPbF Application(s) • Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 27mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compati

5.7. irlml6402.pdf Size:81K _international_rectifier

IRLML9301
IRLML9301

PD- 93755 IRLML6402 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel MOSFET SOT-23 Footprint VDSS = -20V Low Profile (<1.1mm) Available in Tape and Reel G RDS(on) = 0.065? Fast Switching S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, comb

5.8. irlml5103.pdf Size:107K _international_rectifier

IRLML9301
IRLML9301

PD - 9.1260D IRLML5103 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.60? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

5.9. irlml2030pbf.pdf Size:266K _international_rectifier

IRLML9301
IRLML9301

PD - 97432 IRLML2030TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max G 1 ± 20 V RDS(on) max 3 D 100 m (@VGS = 10V) RDS(on) max 2 S Micro3TM (SOT-23) 154 m IRLML2030TRPbF (@VGS = 4.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in

5.10. irlml0060pbf.pdf Size:218K _international_rectifier

IRLML9301
IRLML9301

PD - 97439A IRLML0060TRPbF HEXFET® Power MOSFET VDS 60 V VGS Max ± 16 V RDS(on) max 92 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 116 m IRLML0060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

5.11. irlml0040pbf.pdf Size:201K _international_rectifier

IRLML9301
IRLML9301

PD - 96309A IRLML0040TRPbF HEXFET® Power MOSFET VDSS V 40 VGS Max ± 16 V G 1 RDS(on) max 56 m Ω (@VGS = 10V) 3 D RDS(on) max 78 m Ω S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( ≤ 56mΩ) Lower switching losses Industry-standard pinout Multi-vend

5.12. irlml6302.pdf Size:100K _international_rectifier

IRLML9301
IRLML9301

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.60? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

5.13. irlml6346pbf.pdf Size:230K _international_rectifier

IRLML9301
IRLML9301

PD - 97584A IRLML6346TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide an

5.14. irlml2502.pdf Size:120K _international_rectifier

IRLML9301
IRLML9301

PD - 93757B IRLML2502 HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint VDSS = 20V Low Profile (<1.1mm) 3 D Available in Tape and Reel RDS(on) = 0.045? Fast Switching S 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,

5.15. irlml6244pbf.pdf Size:214K _international_rectifier

IRLML9301
IRLML9301

PD - 97535A IRLML6244TRPbF HEXFET® Power MOSFET VDS 20 V VGS Max ±12 V RDS(on) max 21.0 m (@VGS = 4.5V) RDS(on) max 27.0 m Micro3TM (SOT-23) (@VGS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) ( < 21m) Lower conduction losses Industry-standard SOT-23 Package results in Multi-vendor compatibili

5.16. irlml2402.pdf Size:102K _international_rectifier

IRLML9301
IRLML9301

PD - 9.1257C IRLML2402 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.25? S Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

5.17. irlml0100pbf.pdf Size:178K _international_rectifier

IRLML9301
IRLML9301

PD - 97157 IRLML0100TRPbF HEXFET® Power MOSFET VDS 100 V G 1 VGS Max ± 16 V RDS(on) max 3 D 220 m (@VGS = 10V) S 2 RDS(on) max Micro3TM (SOT-23) 235 m IRLML0100TRPbF (@VGS = 4.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in

5.18. irlml2803.pdf Size:100K _international_rectifier

IRLML9301
IRLML9301

PD - 9.1258C IRLML2803 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 30V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.25? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

5.19. irlml6401.pdf Size:126K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6401PbF HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) VDSS = -12V l Available in Tape and Reel l Fast Switching RDS(on) = 0.05Ω l 1.8V Gate Rated l Lead-Free l Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

5.20. irlml6244trpbf.pdf Size:133K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6244TRPbF HEXFET® Power MOSFET VDS 20 V VGS Max ±12 V RDS(on) max 21.0 m (@VGS = 4.5V) RDS(on) max 27.0 m Micro3TM (SOT-23) (@VGS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) ( < 21m) Lower conduction losses Industry-standard SOT-23 Package results in Multi-vendor c

5.21. irlml2246trpbf.pdf Size:140K _tysemi

IRLML9301
IRLML9301

Product specification IRLML2246TRPbF HEXFET® Power MOSFET VDS -20 V VGS Max ±12 V RDS(on) max 135 m (@VGS = -4.5V) RDS(on) max Micro3TM (SOT-23) 236 m IRLML2246TRPbF (@VGS = -2.5V) Application(s)  System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques result

5.22. irlml6402.pdf Size:140K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6402PbF HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) VDSS = -20V l Available in Tape and Reel 3 D l Fast Switching RDS(on) = 0.065Ω S 2 l Lead-Free l Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extrem

5.23. irlml0040trpbf.pdf Size:168K _tysemi

IRLML9301
IRLML9301

Product specification IRLML0040TRPbF HEXFET® Power MOSFET VDSS V 40 VGS Max ± 16 V G 1 RDS(on) max 56 m Ω (@VGS = 10V) 3 D RDS(on) max 78 m Ω S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( ≤ 56mΩ) Lower switching losses Industry-standard pinout

5.24. irlml5203pbf.pdf Size:122K _tysemi

IRLML9301
IRLML9301

Product specification IRLML5203PbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the

5.25. irlml6344.pdf Size:145K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6344TRPbF HEXFET® Power MOSFET VDS 30 V G 1 VGS Max ± 12 V RDS(on) max 3 D 29 mΩ (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 mΩ IRLML6344TRPbF (@VGS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ) Lower Conduction Losses Industry-standard SOT-23 Package Multi-vendor compatibility RoHS

5.26. irlml6302.pdf Size:146K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6302PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel RDS(on) = 0.60Ω l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

5.27. irlml2502.pdf Size:148K _tysemi

IRLML9301
IRLML9301

Product specification IRLML2502PbF HEXFET® Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (<1.1mm) 3 D l Available in Tape and Reel RDS(on) = 0.045Ω l Fast Switching S 2 l Lead-Free l Halogen-Free Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extrem

5.28. irlml2030trpbf.pdf Size:161K _tysemi

IRLML9301
IRLML9301

Product specification IRLML2030TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max G 1 ± 20 V RDS(on) max 3 D 100 m (@VGS = 10V) RDS(on) max 2 S Micro3TM (SOT-23) 154 m IRLML2030TRPbF (@VGS = 4.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques

5.29. irlml6346trpbf.pdf Size:127K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6346TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no

5.30. irlml2244trpbf.pdf Size:176K _tysemi

IRLML9301
IRLML9301

Product specification IRLML2244TRPbF HEXFET® Power MOSFET VDS -20 V VGS Max ± 12 V G 1 RDS(on) max 54 mΩ 3 D (@VGS = -4.5V) RDS(on) max 2 S 95 mΩ Micro3TM (SOT-23) (@VGS = -2.5V) IRLML2244TRPbF Application(s) • System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 54mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibilit

5.31. irlml6246trpbf.pdf Size:159K _tysemi

IRLML9301
IRLML9301

Product specification IRLML6246TRPbF HEXFET® Power MOSFET VDS 20 V G 1 VGS Max ± 12 V RDS(on) max 3 D 46 m (@VGS = 4.5V) RDS(on) max S 2 Micro3TM (SOT-23) 66 m IRLML6246TRPbF (@VGS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromid

5.32. irlml0030trpbf.pdf Size:162K _tysemi

IRLML9301
IRLML9301

Product specification IRLML0030TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 20 V G 1 RDS(on) max 27 mΩ 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 mΩ (@VGS = 4.5V) IRLML0030TRPbF Application(s) • Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 27mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibilit

5.33. irlml6401.pdf Size:2328K _kexin

IRLML9301
IRLML9301

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit: mm +0.1 2.9 -0.1 ■ Features +0.1 0.4 -0.1 ● Ultra low on-resistance. 3 ● P-Channel MOSFET. ● Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ra

5.34. irlml0100.pdf Size:1950K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET N-Channel MOSFET IRLML0100 (KRLML0100) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 100V ● ID = 1.6A (VGS = 10V) 1 2 +0.02 +0.1 ● RDS(ON) < 220mΩ (VGS = 10V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 ● RDS(ON) < 235mΩ (VGS = 4.5V) 3 D 1. Gate 2. Source S 2 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Param

5.35. irlml6402.pdf Size:2191K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. 1 2 +0.1 +0.05 0.95 -0.1 ● Low profile(<1.1mm). 0.1 -0.01 +0.1 1.9 -0.1 ● Available in tape and reel. ● Fast switching. 1.Base 1. Gate 2.Emitter 2. Source 3

5.36. irlml2502-3.pdf Size:1541K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET N-Channel MOSFET IRLML2502 (KRLML2502) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 4.2 A ● RDS(ON) < 45mΩ (VGS = 4.5V) 1 2 +0.02 +0.1 ● RDS(ON) < 80mΩ (VGS = 2.5V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● Fast Switching 1. Gate 2. Source 3. Drain G 1 3 D S 2 ■ Absolute Maximum Ratings Ta = 25

5.37. irlml2502.pdf Size:1435K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET N-Channel MOSFET IRLML2502 (KRLML2502) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 20V ● ID = 4.2 A 1 2 ● RDS(ON) < 45mΩ (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 ● RDS(ON) < 80mΩ (VGS = 2.5V) 1.9 -0.1 ● Fast Switching 1. Gate 2. Source 3. Drain G 1 3 D S 2 ■ Absolute Maximum Ratings Ta = 25℃

5.38. irlml6402-3.pdf Size:1984K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. 1 2 ● SOT-23 Footprint. +0.02 +0.1 0.15 -0.02 0.95-0.1 ● Low profile(<1.1mm). +0.1 1.9 -0.2 ● Available in tape and reel. ● Fast switching. 1.Base 1. Gate 2.Emitter 2. Source

5.39. irlml2402-3.pdf Size:2075K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 1.2 A( VGS = 4.5V) 1 2 +0.02 +0.1 ● RDS(ON) < 250mΩ (VGS = 4.5V) 0.15 -0.02 0.95 -0.1 +0.1 D 1.9-0.2 ● RDS(ON) < 350mΩ (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter

5.40. irlml2402.pdf Size:2065K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 1.2 A( VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 ● RDS(ON) < 250mΩ (VGS = 4.5V) 0.1 -0.01 1.9+0.1 D -0.1 ● RDS(ON) < 350mΩ (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symb

5.41. irlml0100-23.pdf Size:1939K _kexin

IRLML9301
IRLML9301

SMD Type MOSFET N-Channel MOSFET IRLML0100 (KRLML0100) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 100V ● ID = 1.6A (VGS = 10V) 1 2 +0.1 +0.05 ● RDS(ON) < 220mΩ (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 G 1 ● RDS(ON) < 235mΩ (VGS = 4.5V) 3 D 1. Gate 2. Source 3. Drain S 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter S

5.42. irlml6401-3.pdf Size:2344K _kexin

IRLML9301
IRLML9301

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching. 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9 -0.2 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

5.43. irlml6401.pdf Size:823K _shenzhen-tuofeng-semi

IRLML9301
IRLML9301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an

5.44. irlml6402.pdf Size:660K _shenzhen-tuofeng-semi

IRLML9301
IRLML9301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402 Power MOSFET l Ultra Low On-Resistance D l P-Channel MOSFET l SOT-23 Footprint VDSS = -20V l Low Profile (<1.1mm) l Available in Tape and Reel G RDS(on) = 0.065Ω l Fast Switching S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- re

5.45. irlml2502.pdf Size:593K _shenzhen-tuofeng-semi

IRLML9301
IRLML9301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (<1.1mm) 3 D l Available in Tape and Reel RDS(on) = 0.045Ω l Fast Switching S 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

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IRLML9301
IRLML9301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l D l l l l G l Ω S l Description

Otros transistores... IRFHS9301 , IRFR9024NC , IRFTS9342 , IRLHS2242 , IRLIB9343 , IRLML2244 , IRLML2246 , IRLML5203 , IRFZ44N , IRLML9303 , IRLR9343 , IRLTS2242 , IRLU9343 , IRF7752 , IRF9956 , IRF7501 , IRFHM792 .

 


IRLML9301
  IRLML9301
  IRLML9301
 

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

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