IRFHM792 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFHM792
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 4.7 nS
Cossⓘ - Capacitancia de salida: 31 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.195 Ohm
Encapsulados: PQFN3.3X3.3E
Búsqueda de reemplazo de IRFHM792 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFHM792 datasheet
..1. Size:283K 1
irfhm792.pdf 
PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF HEXFET Power MOSFET VDS 100 V Vgs max TOP VIEW V 20 D RDS(on) max D D D 195 m 8 7 6 5 (@VGS = 10V) G S G S D Qg typ 4.2 nC D D D D D ID 3.4 A 1 2 3 4 (@Tc(Bottom) = 25 C) PQFN Dual 3.3X3.3 mm S G S G Applications DC-DC Primary Switch 48V Battery Monitoring Features and Benefits Features Benefits Low R
..2. Size:261K international rectifier
irfhm792pbf.pdf
IRFHM792PbF HEXFET Power MOSFET VDS 100 V Vgs max TOP VIEW V 20 D RDS(on) max D D D 195 m 8 7 6 5 (@VGS = 10V) G S G S D Qg typ 4.2 nC D D D D D ID 3.4 A 1 2 3 4 (@Tc(Bottom) = 25 C) PQFN Dual 3.3X3.3 mm S G S G Applications DC-DC Primary Switch 48V Battery Monitoring Features and Benefits Features Benefits Low RDSon (
0.1. Size:261K 1
irfhm792trpbf.pdf
IRFHM792PbF HEXFET Power MOSFET VDS 100 V Vgs max TOP VIEW V 20 D RDS(on) max D D D 195 m 8 7 6 5 (@VGS = 10V) G S G S D Qg typ 4.2 nC D D D D D ID 3.4 A 1 2 3 4 (@Tc(Bottom) = 25 C) PQFN Dual 3.3X3.3 mm S G S G Applications DC-DC Primary Switch 48V Battery Monitoring Features and Benefits Features Benefits Low RDSon (
8.1. Size:571K international rectifier
irfhm7194.pdf
FastIRFET IRFHM7194TRPbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.0 ID 34 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDSon (
9.1. Size:593K 1
irfhm8329trpbf.pdf
IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
9.2. Size:532K 1
irfhm830trpbf.pdf
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
9.3. Size:578K 1
irfhm3911trpbf.pdf
IRFHM3911TRPbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 115 m G S (@VGS = 10V) S S Qg (typical) 17 nC D D ID D D 11 A D (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications POE+ Power Sourcing Equipment Switch Features Benefits Large Safe Operating Area (SOA) Increased Ruggedness Low Thermal Resistance to PCB Enable better
9.4. Size:243K international rectifier
irfhm830d.pdf
PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin
9.5. Size:562K international rectifier
irfhm4226.pdf
FastIRFET IRFHM4226TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m (@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 60 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low RDSon (
9.6. Size:655K international rectifier
irfhm8326.pdf
IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
9.7. Size:639K international rectifier
irfhm8329.pdf
IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
9.8. Size:319K international rectifier
irfhm8363pbf.pdf
IRFHM8363PbF HEXFET Power MOSFET VDS 30 V Vgs max V 20 RDS(on) max G 14.9 S G (@VGS = 10V) m S D D (@VGS = 4.5V) 20.4 D D D D Qg typ 6.7 nC PQFN Dual 3.3X3.3 mm ID 10 A (@Tc(Bottom) = 25 C) Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switches Features and Benefits Features Benefits Low
9.9. Size:574K international rectifier
irfhm4231.pdf
FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 3.4 (@ VGS = 10V) m (@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (
9.10. Size:246K international rectifier
irfhm8334.pdf
IRFHM8334TRPbF VDS 30 V HEXFET Power MOSFET VGS max V 20 RDS(on) max 9.0 (@VGS = 10V) m (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC ID PQFN 3.3 X 3.3 mm 25 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for high frequency buck converters Features Benefits Low Thermal Resistance to PCB (
9.11. Size:669K international rectifier
irfhm8330.pdf
IRFHM8330PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.6 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy
9.12. Size:747K international rectifier
irfhm8235.pdf
IRFHM8235PbF HEXFET Power MOSFET VDSS 25 V VGS max 20 V RDS(on) max 7.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 13.4 D Qg (typical) 7.7 nC D D D ID D 25 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (
9.13. Size:581K international rectifier
irfhm4234.pdf
FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G (@ VGS = 10V) m D 6 3 S (@ VGS = 4.5V) 7.1 D 7 2 S Qg (typical) 8.2 nC D 8 1 S ID 60 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching
9.14. Size:629K international rectifier
irfhm8342.pdf
IRFHM8342TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 16 (@ VGS = 10V) m (@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (
9.15. Size:625K international rectifier
irfhm3911.pdf
IRFHM3911TRPbF HEXFET Power MOSFET VDSS 100 V RDS(on) max G 115 m S S (@VGS = 10V) S Qg (typical) 17 nC D D D D ID D 11 A PQFN 3.3X3.3 mm (@TC (Bottom) = 25 C) Applications POE+ Power Sourcing Equipment Switch Features Benefits Large Safe Operating Area (SOA) Increased Ruggedness Low Thermal Resistance to PCB Enable better the
9.16. Size:532K international rectifier
irfhm830pbf.pdf
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
9.18. Size:230K international rectifier
irfhm9331pbf.pdf
IRFHM9331PbF HEXFET Power MOSFET VDS -30 V S S 5 D G RDS(on) max 4 D S 14.6 m D (@VGS = -10V) 6 D S 3 G D 7 D S 2 Qg (typical) 32 nC D 1 8 D S ID -11 A 3mm x 3mm PQFN (@TA = 25 C) Applications l System/load switch Features and Benefits Features Benefits Low Thermal Resistance to PCB (
9.19. Size:256K international rectifier
irfhm831pbf.pdf
PD -97539A IRFHM831PbF HEXFET Power MOSFET VDS 30 V D 5 4 G RDS(on) max 7.8 m (@VGS = 10V) D 6 3 S D 7 2 S Qg (typical) 7.3 nC D 8 1 S RG (typical) 0.5 ID PQFN 3.3mm x 3.3mm 40 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PC
9.20. Size:243K international rectifier
irfhm830dpbf.pdf
PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin
9.21. Size:558K international rectifier
irfhm9391.pdf
IRFHM9391TRPbF HEXFET Power MOSFET VDSS -30 V D 5 4 G RDS(on) max 14.6 (@ VGS = -10V) D 6 3 S m (@ VGS = -4.5V) 22.5 D 7 2 S Qg (typical) 32 nC D 8 1 S ID PQFN 3.3 x 3.3 mm -11 A (@TA = 25 C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (
9.22. Size:651K international rectifier
irfhm8337.pdf
IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 12.4 (@ VGS = 10V) m (@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A (@TC = 25 C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (
9.23. Size:598K infineon
irfhm8326pbf.pdf
IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
9.24. Size:593K infineon
irfhm8329pbf.pdf
IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
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