IRFI4212H-117P Todos los transistores

 ..1. Size:253K  1
 irfi4212h-117p.pdf

PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Key Parameters g Integrated half-bridge package VDS 100 V Reduces the part count by half RDS(ON) typ. @ 10V m 58 Facilitates better PCB layout Qg typ. 12 nC Key parameters optimized for Class-D Qsw typ. 6.9 nC audio amplifier applications RG(int) typ. 3.4 Low RDS(ON) for improved efficiency TJ m

 ..2. Size:253K  international rectifier
 irfi4212h-117p.pdf

PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Key Parameters g Integrated half-bridge package VDS 100 V Reduces the part count by half RDS(ON) typ. @ 10V m 58 Facilitates better PCB layout Qg typ. 12 nC Key parameters optimized for Class-D Qsw typ. 6.9 nC audio amplifier applications RG(int) typ. 3.4 Low RDS(ON) for improved efficiency TJ m

 8.1. Size:245K  international rectifier
 irfi4229pbf.pdf

PD - 97201B IRFI4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 250 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 300 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 32 A and Pass Switch Applications

 8.2. Size:290K  international rectifier
 irfi4227pbf.pdf

PD - 97036B IRFI4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 47 A and Pass Switch Applications

 8.3. Size:302K  international rectifier
 irfi4228pbf.pdf

PD - 97228 IRFI4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 12.2 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 61 A and Pass Switch Applicatio

 8.4. Size:607K  infineon
 irfi4229pbf.pdf

IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG

 8.5. Size:200K  inchange semiconductor
 irfi4228.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4228 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 8.6. Size:201K  inchange semiconductor
 irfi4229.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4229 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 8.7. Size:200K  inchange semiconductor
 irfi4227.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4227 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T