IRF7311 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7311
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 6.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 17 nS
Cossⓘ - Capacitancia de salida: 430 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de IRF7311 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF7311 datasheet
..1. Size:1973K international rectifier
irf7311pbf.pdf 
PD - 95180 IRF7311PbF Lead-Free www.irf.com 1 4/24/04 IRF7311PbF 2 www.irf.com IRF7311PbF www.irf.com 3 IRF7311PbF 4 www.irf.com IRF7311PbF www.irf.com 5 IRF7311PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I SO-8 Part Mark
..2. Size:209K international rectifier
irf7311.pdf
PD - 91435C IRF7311 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance
0.1. Size:852K cn vbsemi
irf7311tr.pdf
IRF7311TR www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5
8.1. Size:365K 1
auirf7319q.pdf
AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 VDSS 30V -30V Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.042 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.029 0.058 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 6.5A -4.9A Fully Avalanch
8.2. Size:298K 1
irf7313q.pdf
PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl
8.3. Size:235K 1
irf7316qpbf.pdf
PD - 96126 IRF7316QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = -30V l Dual P- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 RDS(on) = 0.058 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appli
8.4. Size:256K 1
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8 S1 D1 -30V Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.042 3 6 Low On-Resistance S2 D2 4 5 Logic Level Gate Drive D2 max. G2 0.058 Dual P Channel MOSFET Top View ID -4.9A Surface Mount Available in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Complian
8.5. Size:105K international rectifier
irf7313.pdf
PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
8.6. Size:218K international rectifier
irf7313qpbf.pdf
PD - 96125A IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029 Description Top View These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastes
8.7. Size:204K international rectifier
irf7313pbf-1.pdf
IRF7313PbF-1 HEXFET Power MOSFET VDS 30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 nC 4 5 G2 D2 ID 6.5 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Enviro
8.8. Size:236K international rectifier
irf7317pbf.pdf
PD - 95296 IRF7317PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 20V -20V 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029 0.058 Description Top View Fifth Generation HEXFETs from International Rectif
8.9. Size:239K international rectifier
auirf7313q.pdf
PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23m 3 6 S2 D2 l 175 C Operating Temperature max. 29m 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des
8.10. Size:205K international rectifier
irf7313pbf.pdf
PD - 95039 IRF7313PbF HEXFET Power MOSFET l Generation V Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N-Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
8.11. Size:103K international rectifier
irf7316.pdf
PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
8.13. Size:103K international rectifier
irf7316s.pdf
PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
8.14. Size:147K international rectifier
irf7314.pdf
PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
8.15. Size:195K international rectifier
irf7314pbf.pdf
PD - 95181 IRF7314PbF HEXFET Power MOSFET l Generation V Technology 1 8 S1 D1 l Ultra Low On-Resistance VDSS = -20V 2 7 l Dual P-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
8.16. Size:137K international rectifier
irf7319.pdf
PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifi
8.17. Size:215K international rectifier
irf7316qpbf.pdf
PD - 96126A IRF7316QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P- Channel MOSFET VDSS = -30V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description These HEXFET Power MOSFET's in a Dual SO-8 package utilize the laste
8.18. Size:203K international rectifier
irf7316pbf.pdf
PD - 95182 IRF7316PbF HEXFET Power MOSFET l Generation V Technology 1 8 S1 D1 l Ultra Low On-Resistance VDSS = -30V 2 7 l Dual P-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
8.19. Size:156K international rectifier
irf7317.pdf
PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Description Top View Fifth Generation HEXFETs from International Rectifier ut
8.20. Size:224K international rectifier
irf7319pbf.pdf
PD - 95267 IRF7319PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifi
8.21. Size:203K international rectifier
irf7316pbf-1.pdf
IRF7316TRPbF-1 HEXFET Power MOSFET VDS -30 V 1 8 S1 D1 RDS(on) max 0.058 2 7 G1 D1 (@V = -10V) GS Qg (typical) 23 nC 3 6 S2 D2 ID 4 5 -4.9 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En
8.23. Size:578K infineon
auirf7313q.pdf
AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8 S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 23m Dual N Channel MOSFET 3 6 S2 D2 max. 4 Low On-Resistance 5 29m G2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Lead-Free, RoHS Compliant
8.24. Size:256K infineon
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8 S1 D1 -30V Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.042 3 6 Low On-Resistance S2 D2 4 5 Logic Level Gate Drive D2 max. G2 0.058 Dual P Channel MOSFET Top View ID -4.9A Surface Mount Available in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Complian
8.25. Size:909K cn vbsemi
irf7314trpbf.pdf
IRF7314TRPBF www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top
8.27. Size:892K cn vbsemi
irf7319tr.pdf
IRF7319TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG
8.28. Size:1946K cn vbsemi
irf7317tr.pdf
IRF7317TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG
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