IRFH7911 Todos los transistores

 

IRFH7911 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH7911

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm

Encapsulados: PQFN5X6C

 Búsqueda de reemplazo de IRFH7911 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFH7911 datasheet

 ..1. Size:315K  international rectifier
irfh7911pbf.pdf pdf_icon

IRFH7911

IRFH7911PbF HEXFET Power MOSFET Q1 Q2 VDS 30 30 V RDS(on) max 8.6 3.0 m (@VGS = 10V) Qg (typical) 8.3 34 nC ID 13 28 A (@TA = 25 C) Dual PQFN 5X6 mm Applications Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low charge control MOSF

 7.1. Size:288K  1
irfh7914trpbf.pdf pdf_icon

IRFH7911

IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

 7.2. Size:288K  international rectifier
irfh7914pbf.pdf pdf_icon

IRFH7911

IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

 8.1. Size:260K  1
irfh7934trpbf.pdf pdf_icon

IRFH7911

IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L

Otros transistores... IRFHM8363 , IRL6372 , IRF9910 , IRF7311 , IRF7313 , IRF7752G , IRF7904 , IRF7303Q , 8205A , IRFI4024H-117P , IRF6723M2D , IRFI4019H-117P , IRF8513 , IRF7101 , IRFI4019HG-117P , IRF7103 , IRLHS6276 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E

 

 

 

Popular searches

irf740 datasheet | ksa992 | irfb4227 | irfb4110 | tip36c | bd139 transistor | irf840 datasheet | ge10001

 

 

↑ Back to Top
.