IRFH7911 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFH7911
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 8.3 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
   Paquete / Cubierta: PQFN5X6C

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IRFH7911 Datasheet (PDF)

..1. Size:525K international rectifier
irfh7911pbf.pdf

PD - 97427AIRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m:(@VGS = 10V)Qg (typical)8.3 34nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low char

..2. Size:315K infineon
irfh7911pbf.pdf

IRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m(@VGS = 10V)Qg (typical)8.3 34 nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low charge control MOSF

7.1. Size:288K 1
irfh7914trpbf.pdf

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-

7.2. Size:249K international rectifier
irfh7914pbf.pdf

PD - 97336IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSDl Low Gate ChargeSl Fully Characterized Avalanche Voltage andDG Current

7.3. Size:288K infineon
irfh7914pbf.pdf