IRLHS6376 Todos los transistores

 

IRLHS6376 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLHS6376
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 2.8 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
   Paquete / Cubierta: PQFN2X2

 Búsqueda de reemplazo de MOSFET IRLHS6376

 

IRLHS6376 Datasheet (PDF)

 ..1. Size:290K  international rectifier
irlhs6376pbf.pdf

IRLHS6376
IRLHS6376

IRLHS6376PbFHEXFET Power MOSFETVDS30 VVGS 12 VD1RDS(on) max 63 m G2(@VGS = 4.5V)S2 D1D2RDS(on) max 82 m(@VGS = 2.5V)S1G1ID D23.4 A(@Tc(Bottom) = 25C)2mm x 2mm Dual PQFNApplications Charge and discharge switch for battery application Load/System SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 63m)

 7.1. Size:263K  international rectifier
irlhs6342pbf.pdf

IRLHS6376
IRLHS6376

IRLHS6342PbFHEXFET Power MOSFETVDS30 VTOP VIEWVGS12 VD 1 6 DRDS(on) max D15.5 mD(@VGS = 4.5V)GD 2 D 5 D DQg (typical) 11 nCSG 3 4 SDIDDS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon (

 8.1. Size:288K  international rectifier
irlhs6276pbf.pdf

IRLHS6376
IRLHS6376

IRLHS6276PbFHEXFET Power MOSFETVDS20 VVGS12 VRDS(on) max D145 mG2(@VGS = 4.5V)S2 D1D2RDS(on) max 62 m(@VGS = 2.5V)S1G1ID D23.4 A(@Tc(Bottom) = 25C)2mm x 2mm Dual PQFNApplications Charge and discharge switch for battery application Load/System SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 45m)

 8.2. Size:219K  international rectifier
irlhs6242pbf.pdf

IRLHS6376
IRLHS6376

PD - 97582BIRLHS6242PbFHEXFET Power MOSFETVDS20 VVGS V12RDS(on) max 11.7 mD(@VGS = 4.5V)DGDRDS(on) max 15.5 m(@VGS = 2.5V)DIDDS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 11.7m)

 8.3. Size:240K  infineon
irlhs6242pbf.pdf

IRLHS6376
IRLHS6376

IRLHS6242PbFHEXFET Power MOSFETVDS20 VTOP VIEWVGS V12RDS(on) max D 1 6 D11.7 mD(@VGS = 4.5V)DGDRDS(on) max D 2 D 5 D15.5 m(@VGS = 2.5V)DIDSDG 3 4 SS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting Benef

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


IRLHS6376
  IRLHS6376
  IRLHS6376
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top