IRLHS6376 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLHS6376  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 32 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm

Encapsulados: PQFN2X2

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IRLHS6376 datasheet

 ..1. Size:290K  international rectifier
 irlhs6376pbf.pdf pdf_icon

IRLHS6376

IRLHS6376PbF HEXFET Power MOSFET VDS 30 V VGS 12 V D1 RDS(on) max 63 m G2 (@VGS = 4.5V) S2 D1 D2 RDS(on) max 82 m (@VGS = 2.5V) S1 G1 ID D2 3.4 A (@Tc(Bottom) = 25 C) 2mm x 2mm Dual PQFN Applications Charge and discharge switch for battery application Load/System Switch Features and Benefits Features Resulting Benefits Low RDSon ( 63m )

 7.1. Size:263K  international rectifier
 irlhs6342pbf.pdf pdf_icon

IRLHS6376

IRLHS6342PbF HEXFET Power MOSFET VDS 30 V TOP VIEW VGS 12 V D 1 6 D RDS(on) max D 15.5 m D (@VGS = 4.5V) G D 2 D 5 D D Qg (typical) 11 nC S G 3 4 S D ID D S 12 A S (@TC (Bottom) = 25 C) 2mm x 2mm PQFN Applications Charge and discharge switch for battery application System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (

 8.1. Size:288K  international rectifier
 irlhs6276pbf.pdf pdf_icon

IRLHS6376

IRLHS6276PbF HEXFET Power MOSFET VDS 20 V VGS 12 V RDS(on) max D1 45 m G2 (@VGS = 4.5V) S2 D1 D2 RDS(on) max 62 m (@VGS = 2.5V) S1 G1 ID D2 3.4 A (@Tc(Bottom) = 25 C) 2mm x 2mm Dual PQFN Applications Charge and discharge switch for battery application Load/System Switch Features and Benefits Features Resulting Benefits Low RDSon ( 45m )

 8.2. Size:240K  international rectifier
 irlhs6242pbf.pdf pdf_icon

IRLHS6376

IRLHS6242PbF HEXFET Power MOSFET VDS 20 V TOP VIEW VGS V 12 RDS(on) max D 1 6 D 11.7 m D (@VGS = 4.5V) D G D RDS(on) max D 2 D 5 D 15.5 m (@VGS = 2.5V) D ID S D G 3 4 S S 12 A S (@TC (Bottom) = 25 C) 2mm x 2mm PQFN Applications Charge and discharge switch for battery application System/Load Switch Features and Benefits Features Resulting Benef

MOSTRAR MÁS

Otros transistores... IRF7103, IRLHS6276, IRF7103Q, IRF7341Q, IRF7905, IRF7907, IRF8910, IRF7351, 4435, IRF7902, IRF8915, IRF7331, IRF7530, IRF8313, IRF8910G, IRF7303, IRF7313Q