IRF7530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD-93760BIRF7530HEXFET Power MOSFET Trench Technology1 8 Ultra Low On-Resistance S1 D1VDSS = 20V Dual N-Channel MOSFET 2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

PD - 95697IRF7534D1PbF Lead-Freewww.irf.com9/2/04IRF7534D1PbF2 www.irf.comIRF7534D1PbFwww.irf.com 3IRF7534D1PbF4 www.irf.comIRF7534D1PbFwww.irf.com 5IRF7534D1PbF6 www.irf.comIRF7534D1PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036

PD -93864IRF7534D1FETKY MOSFET & Schottky Diode Co-packaged HEXFET power1 8A KMOSFET and Schottky diodeVDSS = -20V2 7 Ultra Low On-ResistanceA KMOSFET3 6S DRDS(on) = 0.055 Trench technology45G D Micro8TM FootprintSchottky Vf=0.39V Available in Tape & ReelTop ViewDescriptionThe FETKY family of co-packaged MOSFETs and Schottky diodes offers the

PD- 91647CIRF7523D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 30V2 7 N-Channel HEXFETA K Low VF Schottky Rectifier3 6 RDS(on) = 0.11S D Generation 5 Technology45TMG D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schott

PD - 95218IRF7507PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET 2 7G1 D1l Very Small SOIC Package3 6VDSS 20V -20VS2 D2l Low Profile (

PD - 91270JIRF7509HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 30V -30VS2 D2 Low Profile (

PD - 9.1267GIRF7504HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual P-Channel MOSFETVDSS = -20V2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

PD - 91269IIRF7507HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 20V -20VS2 D2 Low Profile (

PD -96176IRF7524D1GPbFFETKYTM MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8MOSFET and Schottky Diode KAVDSS = -20Vl P-Channel HEXFET2 7A Kl Low VF Schottky Rectifier3 6S Dl Generation 5 Technology RDS(on) = 0.27TM45l Micro8 FootprintG Dl Lead-FreeSchottky Vf = 0.39Vl Halogen-Free Top ViewDescriptionThe FETKYTM family of co-packaged H

PD -95437IRF7526D1PbFFETKY TM MOSFET & Schottky Diodel Co-packaged HEXFET PowerMOSFET and Schottky Diode1 8A Kl P-Channel HEXFETVDSS = -30V2 7l Low VF Schottky RectifierA Kl Generation 5 Technology3 6S D RDS(on) = 0.20TMl Micro8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VDescription Top ViewThe FETKYTM family of co-packaged HEXFETs and Schot

PD- 95346IRF7503PbF Lead-Freewww.irf.com 102/22/05IRF7503PbF2 www.irf.comIRF7503PbFwww.irf.com 3IRF7503PbF4 www.irf.comIRF7503PbFwww.irf.com 5IRF7503PbF6 www.irf.comIRF7503PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91

StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET Application Brushed motor drive applications VDSS 60V BLDC motor drive applications RDS(on) typ. Battery powered circuits 2.9m Half-bridge and full-bridge topologies max 3.6m Synchronous rectifier applications Resonant mode power supplies ID 114A

PD -91649CIRF7526D1FETKY TM MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -30V2 7A K P-Channel HEXFET3 6 Low VF Schottky RectifierS D RDS(on) = 0.20 Generation 5 Technology45G DTM Micro8 FootprintSchottky Vf = 0.39VDescription Top ViewThe FETKYTM family of co-packaged HEXFETs and Schottky diodes offer th

PD - 91265HIRF7501PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ulrtra Low On-ResistanceVDSS =20V2 7 Dual N-Channel MOSFETG1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

PD - 9.1266GIRF7503HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual N-Channel MOSFETVDSS = 30V2 7G1 D1 Very Small SOIC Package3 6S2 Low Profile (

PD- 95241IRF7521D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFET1 8and Schottky DiodeA KVDSS = 20Vl N-Channel HEXFET2 7A Kl Low VF Schottky Rectifier3 6 RDS(on) = 0.135S Dl Generation 5 TechnologyTM4l Micro8 Footprint 5G DSchottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky

PD - 95696IRF7506PbF Lead-Freewww.irf.com9/2/04IRF7506PbF2 www.irf.comIRF7506PbFwww.irf.com 3IRF7506PbF4 www.irf.comIRF7506PbFwww.irf.com 5IRF7506PbF6 www.irf.comIRF7506PbFMicro8 Package OutlineLEAD ASSIGNMENTSINCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91 1.11A1 .004 .008 0.10 0.208 7 6 5 8 7 6 5 B

PD -91648CPRELIMINARYIRF7524D1FETKYTM MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 P-Channel HEXFET A K Low VF Schottky Rectifier3 6S DRDS(on) = 0.27 Generation 5 Technology45TM G D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky d

StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET Application Brushed motor drive applications VDSS 60V BLDC motor drive applications RDS(on) typ. Battery powered circuits 2.9m Half-bridge and full-bridge topologies max 3.6m Synchronous rectifier applications Resonant mode power supplies ID 114A

PD - 95397IRF7509PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET2 7G1 D1l Very Small SOIC Package3 6 VDSS 30V -30VS2 D2l Low Profile (

PD -91865BIRF7555HEXFET Power MOSFET Trench Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

PD- 95912IRF7504PbF Lead-Freewww.irf.com 12/22/05IRF7504PbF2 www.irf.comIRF7504PbFwww.irf.com 3IRF7504PbF4 www.irf.comIRF7504PbFwww.irf.com 5IRF7504PbF6 www.irf.comIRF7504PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91

PD-91646CIRF7521D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 20V2 7 N-Channel HEXFETA K Low VF Schottky Rectifier3 6 RDS(on) = 0.135S D Generation 5 Technology45TMG D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFE

IRF7509PbF-1HEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8VDS 30 -30 V S1 D12 7RDS(on) max G1 D10.11 0.2 (@V = 10V)GS3 6S2 D2Qg (typical) 7.8 7.5 nC45G2 D2ID 2.7 -2.0 A P-CHANNEL MOSFET(@T = 25C)AMicro8Top ViewFeatures BenefitsIndustry-standard pinout Micro-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount

PD- 95434IRF7523D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFETand Schottky Diode1 8A Kl N-Channel HEXFET VDSS = 30V2 7l Low VF Schottky Rectifier A Kl Generation 5 Technology3 6 RDS(on) = 0.11S DTMl Micro8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky d

PD - 9.1268FIRF7506HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

PD -95242IRF7524D1PbFFETKYTM MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l P-Channel HEXFET A Kl Low VF Schottky Rectifier3 6S DRDS(on) = 0.27l Generation 5 Technology45TM G Dl Micro8 FootprintSchottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Scho

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value