IRF8313 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF8313
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 9.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9.9 nS
Cossⓘ - Capacitancia de salida: 172 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de IRF8313 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF8313 datasheet
..1. Size:254K international rectifier
irf8313pbf.pdf 
PD - 97145 IRF8313PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Load Switch l DC/DC Conversion 30V 15.5m 6.0nC @VGS = 10V Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current S2 1 8 D2 l 20V VGS Max. Gate Rating G2 2 7 D2 l 100% Tested for RG S1 3 6 D1 l Lead-Free (Qualified to 260 C Reflow) G1 4 5 D1 l RoHS Compliant
8.2. Size:231K inchange semiconductor
irf831fi.pdf
isc N-Channel MOSFET Transistor IRF831FI DESCRIPTION Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSO
9.1. Size:155K international rectifier
irf830as.pdf
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre
9.2. Size:268K international rectifier
irf8308mpbf irf8308mtrpbf.pdf
PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
9.3. Size:326K international rectifier
irf830spbf.pdf
PD - 95542 IRF830SPbF Lead-Free SMD-220 7/21/04 Document Number 91064 www.vishay.com 1 IRF830SPbF Document Number 91064 www.vishay.com 2 IRF830SPbF Document Number 91064 www.vishay.com 3 IRF830SPbF Document Number 91064 www.vishay.com 4 IRF830SPbF Document Number 91064 www.vishay.com 5 IRF830SPbF Document Number 91064 www.vishay.com 6 IRF830SPbF Peak Diode
9.4. Size:267K international rectifier
irf8306mtrpbf.pdf
PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max 20V max 1.8m @ 10V 2.8m @ 4.5V l Low Profile (
9.5. Size:220K international rectifier
irf8302mpbf.pdf
PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max 20V max 1.4m @ 10V 2.2m @ 4.5V l Low Profile (
9.6. Size:338K international rectifier
irf8301mtrpbf.pdf
StrongIRFET IRF8301MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l Ultra-low RDS(on) VDSS VGS RDS(on) RDS(on) l Low Profile (
9.7. Size:338K international rectifier
irf8301m.pdf
StrongIRFET IRF8301MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l Ultra-low RDS(on) VDSS VGS RDS(on) RDS(on) l Low Profile (
9.8. Size:108K international rectifier
irf830a.pdf
PD- 91878C SMPS MOSFET IRF830A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren
9.9. Size:273K international rectifier
irf8304mpbf.pdf
IRF8304MPbF DirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (
9.10. Size:258K international rectifier
irf8327spbf.pdf
IRF8327SPbF DirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (
9.11. Size:875K international rectifier
irf830pbf.pdf
PD - 94881 IRF830PbF Lead-Free 12/10/03 Document Number 91063 www.vishay.com 1 IRF830PbF Document Number 91063 www.vishay.com 2 IRF830PbF Document Number 91063 www.vishay.com 3 IRF830PbF Document Number 91063 www.vishay.com 4 IRF830PbF Document Number 91063 www.vishay.com 5 IRF830PbF Document Number 91063 www.vishay.com 6 IRF830PbF TO-220AB Package Outline
9.12. Size:168K international rectifier
irf830apbf.pdf
PD- 94820 SMPS MOSFET IRF830APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Volt
9.13. Size:155K international rectifier
irf830al.pdf
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre
9.14. Size:676K international rectifier
irf830aspbf irf830alpbf.pdf
PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Vol
9.15. Size:58K philips
irf830 1.pdf
Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 A g RDS(ON) 1.5 s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTI
9.16. Size:92K st
irf830.pdf
IRF830 N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF830 500 V
9.20. Size:911K samsung
irf830a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V
9.21. Size:207K vishay
irf830alpbf irf830aspbf sihf830al sihf830as.pdf
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 24 Requirement Qgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterize
9.22. Size:174K vishay
irf830lpbf irf830spbf sihf830l.pdf
IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 500 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 38 Repetitive avalanche rated Qgs (nC) 5.0 Fast switching Available Qgd (nC) 22 Ease of paralleling Configuration Single
9.23. Size:1091K vishay
irf830a sihf830a.pdf
IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configurati
9.24. Size:1093K vishay
irf830apbf sihf830a.pdf
IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configurati
9.26. Size:201K vishay
irf830 sihf830.pdf
IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DE
9.27. Size:62K onsemi
irf830.rev0.pdf
IRF830 Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http //onsemi.com Silicon Gate for Fast Switching Speeds TMOS POWER FET Low RDS(on) to Minimize On Losses, Specified at Elevated Temp
9.28. Size:46K hsmc
hirf830.pdf
Spec. No. MOS200407 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi
9.29. Size:95K ape
irf830.pdf
IRF830 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.
9.30. Size:95K ape
irf830i-hf.pdf
IRF830I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5A G RoHS Compliant & Halogen-Free S Description G APEC MOSFET provide the power designer with the best combination of D TO-220CFM(I) S fast switching ,
9.31. Size:839K blue-rocket-elect
irf830.pdf
IRF830 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi
9.32. Size:1986K kexin
irf830s.pdf
SMD Type MOSFET N-Channel MOSFET IRF830S (KRF830S) Features VDS (V) = 500V ID = 4.5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast Switching Repetitive Avalanche Rated D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 20 Tc=25 4.5 Continuous Drain Current ID
9.33. Size:880K cn vbsemi
irf830astrl.pdf
IRF830ASTRL www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd
9.34. Size:2535K cn vbsemi
irf830p.pdf
IRF830P www.VBsemi.tw N hannel 600 D S Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 Available requirement RDS(on) ( )VGS = 10 V 0.8 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single
9.35. Size:231K inchange semiconductor
irf830fi.pdf
isc N-Channel MOSFET Transistor IRF830FI DESCRIPTION Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSO
9.36. Size:114K inchange semiconductor
irf830.pdf
MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=500V; RDS(ON) 1.5 ;ID=4.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 4
9.37. Size:234K inchange semiconductor
irf830a.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF830A FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply Uninterruptable Power Supply High speed power switc
Otros transistores... IRF7907
, IRF8910
, IRF7351
, IRLHS6376
, IRF7902
, IRF8915
, IRF7331
, IRF7530
, AON7410
, IRF8910G
, IRF7303
, IRF7313Q
, IRF7910
, IRF7380Q
, IRF7341
, IRF7503
, IRF8852
.
History: WML26N65C4
| 2SK1315L
| WMP15N60C4
| SFT1423
| APTC90DAM60CT1G
| WMK16N70SR
| SWU069R10VS
