IRF7910 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94419IRF7910HEXFET Power MOSFETVDSS RDS(on) max IDApplications 12V 15m @VGS = 4.5V 10Al High Frequency 3.3V and 5V input Point-of-Load Synchronous Buck Converters forNetcom and Computing Applicationsl Power Management for Netcom, Computing and Portable Applications1 8S1 D12 7G1 D1Benefits3 6l Ultra-Low Gate ImpedanceS2 D2l Very Low RDS(on)45

IRF7910PbF-1HEXFET Power MOSFETVDS 12 V1 8S1 D1RDS(on) max 15 m2 7(@V = 4.5V) G1 D1GSQg (typical) 17 nC 3 6S2 D2ID 4510 A G2 D2(@T = 25C)ASO-8Top ViewApplicationsl High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom andComputing Applicationsl Power Management for Netcom, Computing and Portable ApplicationsFe

StrongIRFETIRF7946PbFApplicationsDirectFET Power MOSFETl Brushed Motor drive applicationsVDSS 40Vl BLDC Motor drive applicationsRDS(on) typ. 1.1ml Battery powered circuits max. 1.4ml Half-bridge and full-bridge topologiesID (Silicon Limited) 198Al Synchronous rectifier applicationsl Resonant mode power suppliesID (Package Limited) 90A l OR-ing and redund

PD - 97066AIRF7907PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.4m @VGS = 10V 9.1AGraphics Cards, Game Consolesand Set-Top BoxQ2 11.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

PD - 97065BIRF7905PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 21.8m @VGS = 10V 7.8AGraphics Cards, Game Consolesand Set-Top BoxQ2 17.1m @VGS = 10V 8.9ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Ra

IRF7904PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max Q116.2G1 1 8 D1(@V = 10V)GSmRDS(on) max Q2S2 2 7 S1 / D210.8(@V = 10V)GSS2 3 6 S1 / D2Qg (typical) Q1 7.5nCQ Q2 14g (typical) G2 4 5 S1 / D2ID Q1 7.6(@TA = 25C)SO-8AID Q2 11(@TA = 25C)Applicationsl Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers,Graphics Cards,

PD - 96919BIRF7904PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.2m @VGS = 10V 7.6AGraphics Cards, Game Consolesand Set-Top BoxQ2 10.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

PD- 93844BIRF7901D1 Co-Pack Dual N-channel HEXFET Power MOSFETDual FETKYand Schottky Diode Ideal for Synchronous Buck DC-DCCo-Packaged Dual MOSFET Plus Schottky DiodeConverters Up to 5A Peak Output Low Conduction LossesDevice Ratings (Max.Values) Low Switching Losses Low Vf Schottky RectifierQ1 Q2and SchottkyQ1Pwr18Source VinVDS 30V 30V

PD - 97194AIRF7902PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,22.6m @VGS = 10V30V Q1 6.4AGraphics Cards, Game Consoles14.4m @VGS = 10VQ2 9.7Aand Set-Top BoxBenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Current l 20V VGS Max. Gate

IRF7907TRPbF-1HEXFET Power MOSFETV 30 VDSR Q1DS(on) m ax S2 1 8 D216.4(@V = 10V)GSmR Q2DS(on) m ax G2 2 7 D211.8(@V = 10V)GSS1 3 6 D1Q Q1 6.7g (typical) nCQ Q2 14g (typical) G1 4 5 D1I Q1 9.1D(@TA = 25C)SO-8AI Q2 11D(@TA = 25C)Applicationsl Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,

StrongIRFETIRF7946PbFApplicationsDirectFET Power MOSFETl Brushed Motor drive applicationsVDSS 40Vl BLDC Motor drive applicationsRDS(on) typ. 1.1ml Battery powered circuits max. 1.4ml Half-bridge and full-bridge topologiesID (Silicon Limited) 198Al Synchronous rectifier applicationsl Resonant mode power suppliesID (Package Limited) 90A l OR-ing and redund

PD - 97066AIRF7907PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.4m @VGS = 10V 9.1AGraphics Cards, Game Consolesand Set-Top BoxQ2 11.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

PD - 96919BIRF7904PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.2m @VGS = 10V 7.6AGraphics Cards, Game Consolesand Set-Top BoxQ2 10.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

IRF7905TRwww.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S