IRF7380Q Todos los transistores

 

IRF7380Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7380Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.073 Ohm

Encapsulados: SO8

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IRF7380Q datasheet

 ..1. Size:200K  international rectifier
 irf7380qpbf.pdf pdf_icon

IRF7380Q

PD - 96132B IRF7380QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max ID l N Channel MOSFET 73m @VGS = 10V l Surface Mount 80V 2.2A l Available in Tape & Reel l 150 C Operating Temperature l Lead-Free 1 8 S1 D1 2 7 Description G1 D1 Additional features of These HEXFET Power 3 6 S2 D2 MOSFET's are a 150 C junction operating 4

 7.1. Size:226K  international rectifier
 irf7380pbf.pdf pdf_icon

IRF7380Q

IRF7380PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 80V 73m @VGS = 10V 3.6A l Lead-Free Benefits 1 8 S1 D1 l Low Gate to Drain Charge to Reduce 2 7 G1 D1 Switching Losses 3 6 l Fully Characterized Capacitance Including S2 D2 Effective COSS to Simplify Design, (See 4 5 G2 D2 App. Note AN1001) l Fully Characterized Avalanche Vol

 7.2. Size:205K  international rectifier
 irf7380pbf-1.pdf pdf_icon

IRF7380Q

IRF7380TRPbF-1 HEXFET Power MOSFET VDS 80 V 1 8 S1 D1 RDS(on) max 2 7 73 m G1 D1 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 15 nC 4 5 ID G2 D2 3.6 A (@T = 25 C) A Top View SO-8 Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Ma

 8.1. Size:259K  international rectifier
 irf7389pbf.pdf pdf_icon

IRF7380Q

PD - 95462 IRF7389PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier

MOSTRAR MÁS

Otros transistores... IRF8915 , IRF7331 , IRF7530 , IRF8313 , IRF8910G , IRF7303 , IRF7313Q , IRF7910 , AON6380 , IRF7341 , IRF7503 , IRF8852 , IRF7103I , IRF7304Q , IRF7756G , IRF7314Q , IRF7329 .

History: SM2360NSA | WML071N15HG2 | 2SK3065T100 | NTTFS4C13N

 

 

 

 

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